Browsing by Subject "Films"

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2D material liquid crystals for optoelectronics and photonics
(Royal Society of Chemistry, 2017) Hogan, Ben T.; Kovalska, Evgeniya; Craciun, Monica F.; Baldycheva, Anna
The merging of the materials science paradigms of liquid crystals and 2D materials promises superb new opportunities for the advancement of the fields of optoelectronics and photonics. In this review, we summarise the development of 2D material liquid crystals by two different methods: dispersion of 2D materials in a liquid crystalline host and the liquid crystal phase arising from dispersions of 2D material flakes in organic solvents. The properties of liquid crystal phases that make them attractive for optoelectronics and photonics applications are discussed. The processing of 2D materials to allow for the development of 2D material liquid crystals is also considered. An emphasis is placed on the applications of such materials; from the development of films, fibers and membranes to display applications, optoelectronic devices and quality control of synthetic processes. © 2017 The Royal Society of Chemistry.
Open Access
Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016-02) Alevli, M.; Haider A.; Kizir S.; Leghari, S. A.; Bıyıklı, Necmi
GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.
Open Access
Dye-sensitized solar cell with a titanium-oxide-modified carbon nanotube transparent electrode
(American Institute of Physics, 2011-07-15) Kyaw, A. K. K.; Tantang, H.; Wu, T.; Ke, L.; Peh, C.; Huang, Z. H.; Zeng, X. T.; Demir, Hilmi Volkan; Zhang, Q.; Sun, X. W.
Transparent and conductive carbon-based materials are promising for window electrodes in solid-state optoelectronic devices. However, the catalytic activity to redox reaction limits their application as a working electrode in a liquid-type dye-sensitized solar cell (DSSC). In this letter, we propose and demonstrate a transparent carbon nanotubes (CNTs) film as the working electrode in a DSSC containing iodide/triiodide redox couples. This implementation is realized by inhibiting the charge-transfer kinetics at CNT/redox solution interface with an aid of thin titanium oxide film that facilitates the unidirectional flow of electrons in the cell without sacrificing the electrical and optical properties of CNT.
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Evidence for Nonradiative Energy Transfer in Graphene-Oxide-Based Hybrid Structures
(American Chemical Society, 2013-11-13) Yeltik, A.; Kucukayan-Dogu, G.; Guzelturk, B.; Fardindoost, S.; Kelestemur, Y.; Demir, Hilmi Volkan
Solution processed graphene variants including graphene oxide (GO) and reduced graphene oxide (RGO) are promising materials for potential optoelectronic applications. To date, efficiency of the excitation energy transfer into GO and RGO thin layers has not been investigated in terms of donor-acceptor separation distance. In the present work, we study nonradiative energy transfer (NRET) from CdSe/CdS quantum dots into single and/or double layer GO or RGO using time-resolved fluorescence spectroscopy. We observe shorter lifetimes as the separation distance between the QDs and GO or RGO decreases. In accordance with these lifetimes, the rates reveal the presence of two different mechanisms dominating the NRET. Here we show that excitonic NRET is predominant at longer intervals while both excitonic and nonexcitonic NRET exist at shorter distances. In addition, we find the NRET rate behavior to be strongly dependent on the reduction degree of the GO-based layers. We obtain high NRET efficiency levels of similar to 97 and similar to 89% for the closest separation of the QD-RGO pair and the QD-GO pair, respectively. These results indicate that strong NRET from QDs into thin layer GO and RGO makes these solution-processable thin films promising candidates for light harvesting and detection systems.
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Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate
(Springer, 2013-08-08) Arslan, E.; Ozturk, M. K.; Cakmak, H.; Demirel, P.; Ozcelik, S.; Özbay, Ekmel
The InxGa1-xN epitaxial layers, with indium (x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) Al2O3 substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.
Open Access
Extraordinary grating-coupled microwave transmission through a subwavelength annular aperture
(Optical Society of America, 2005-03-07) Caglayan, H.; Bulu, I.; Özbay, Ekmel
We studied coupling phenomena between surface plasmons and electromagnetic waves in the microwave spectrum using circular apertures surrounded by array of grooves. We first present experimental and theoretical results of enhanced microwave transmission though a subwavelength circular aperture with concentric periodic grooves around the surface plasmon resonance frequency. This is followed by transmission studies through circular annular apertures and circular annular apertures surrounded by concentric periodic grooves. We demonstrated that 145 fold enhancement factor could be obtained with a subwavelength circular annular aperture surrounded by concentric periodic grooves. Our results show that, high transmission from a circular annular aperture with grooves is assisted by the guided mode of the coaxial waveguide and coupling to the surface plasmons. (C) 2005 Optical Society of America.
Open Access
Flexible organic-inorganic core-shell nanofibers by electrospinning and atomic layer deposition
(CRC Press, 2012) Kayacı, Fatma; Çağla, Özgit-Akgün; Dönmez, İnci; Bıyıklı, Necmi; Uyar, Tamer
Organic-inorganic core-shell nanofibers were fabricated by combining electrospinning and atomic layer deposition (ALD). In the first step, nylon66 (polymeric organic core) nanofibers having different average fiber diameters (∼100 nm, ∼250 nm and ∼650 nm) were electrospun by using different solvent systems and polymer concentrations. In the second step, uniform and conformal layer of zinc oxide (ZnO) (inorganic shell) with precise thickness (∼90 nm) and composition on the round surface of the nylon nanofibers were deposited by ALD. The core-shell nylon66-ZnO nanofibers have shown unique properties such as structural flexibility due to the polymeric core and photocatalytic activity due to the ZnO shell layer.
Open Access
Graphene mode-locked multipass-cavity femtosecond Cr4+:forsterite laser
(Optical Society of America, 2013-04-19) Ozharar, S.; Baylam, I.; Cizmeciyan, M. N.; Balci, O.; Pince, E.; Kocabas, C.; Sennaroglu, A.
We report, for the first time to our knowledge, the use of graphene as a saturable absorber in an energy-scaled femtosecond Cr4+: forsterite laser. By incorporating a multipass cavity, the repetition rate of the original short resonator was reduced to 4.51 MHz, which resulted in the generation of 100 fs, nearly transform-limited pulses at 1252 nm with a peak power of 53 kW. To the best of our knowledge, this is the highest peak power obtained from a room-temperature, femtosecond Cr4+: forsterite laser mode locked with a graphene saturable absorber. The corresponding pulse energy was 5.3 nJ with only 24 mW of average output power. The saturation fluence and modulation depth of the GSA were measured to be 25 mu J/cm(2) and 0.74%, respectively. The nonlinear effects in the Cr4+: forsterite medium that limit further power scaling were also investigated by using different output couplers. (c) 2013 Optical Society of America
Open Access
HMM based method for dynamic texture detection
(IEEE, 2007) Töreyin, Behçet Uğur; Çetin, A. Enis
A method for detection of dynamic textures in video is proposed. It is observed that the motion vectors of most of the dynamic textures (e.g. sea waves, swaying tree leaves and branches in the wind, etc.) exhibit random motion. On the other hand, regular motion of ordinary video objects has well-defined directions. In this paper, motion vectors of moving objects are estimated and tracked based on a minimum distance based metric. The direction of the motion vectors are then quantized to define two threestate Markov models corresponding to dynamic textures and ordinary moving objects with consistent directions. Hidden Markov Models (HMMs) are used to classify the moving objects in the final step of the algorithm.
Open Access
Investigation of high frequency performance limit of graphene field effect transistors
(American Institute of Physics, 2010-10) Pince, Ercag; Kocabas, Coşkun
Extremely high field effect mobility together with the high surface coverage makes graphene a promising material for high frequency electronics application. We investigate the intrinsic high frequency performance limit of graphene field effect transistors limited by the charge impurity scattering. The output and transfer characteristics of graphene field effect transistors together with the high frequency performance are characterized as a function of impurity concentration and dielectric constant of the gate insulator. Our results reveal that graphene transistors could provide power gain at radio frequency band.
Open Access
Iraq war films : defining a subgenre
(2015-01) Yüksel, Magdalena Agata
This thesis analyzes a new subgenre of war films, concentrating on particular case of Iraq War films. Treating the war film genre within the notion of a historical event, war is here understood as a setting rather than a direct battlefield experience. Consequently, this thesis recognizes the subgenre of Iraq War films as encapsulating the experiences from both the warzone and homefront. The focus here is thus not only limited to the soldiers at the front, but also to their families, overseeing the trauma as happening in the U.S. While trying to distinguish the conventions of this new subgenre, this dissertation also focuses on the historical context of the war, comparing the War on Terror’s context and representations to those of the World War II and Vietnam War. Ultimately, defining Iraq War films is set on the axis of the previous war films’ conventions, the new technological nature of warfare, and an intimate link between the postmodern influence that affects both narrative and visual style of Iraq War films.
Open Access
Isolation and one-way effects in diffraction on dielectric gratings with plasmonic inserts
(Optical Society of America, 2009-01-02) Serebryannikov, A. E.; Özbay, Ekmel
Diffraction of plane waves on dielectric gratings with planar plasmonic inserts is studied with the emphasis put on the anomalous selectivity of diffraction orders. It is shown that some formally propagating orders can be suppressed within a wide frequency range. The effect of suppression is more general than the isolation effect observed earlier in zero-permittivity and (near-)zero-index slabs and sensitive to the frequency dependent peculiarities of the field distribution within the plasmonic layer. It is required that the real part of the permittivity of this layer is positive less than unity. The wideband features of the suppression effect, i.e., one-way transmission and diffraction-free reflection are demonstrated. Narrowband selectivity effects are also studied. The structures suggested can be used for extending the potential of technologies that are based on multibeam operation and field transformation. (C) 2008 Optical Society of America
Open Access
Large-area semi-transparent light-sensitive nanocrystal skins
(Optical Society of America, 2012) Akhavan, S.; Guzelturk, B.; Sharma, V. K.; Demir, Hilmi Volkan
We report a large-area, semi-transparent, light-sensitive nanocrystal skin (LS-NS) platform consisting of single monolayer colloidal nanocrystals. LS-NS devices, which were fabricated over areas up to 48 cm(2) using spray-coating and several cm-squares using dip-coating, are operated on the principle of photogenerated potential buildup, unlike the conventional charge collection. Implementing proof-of-concept devices using CdTe nanocrystals with ligand removal, we observed a substantial sensitivity enhancement factor of similar to 73%, accompanied with a 3-fold faster response time (<100 ms). With fully sealed nanocrystal monolayers, LS-NS is found to be highly stable under ambient conditions, promising for low-cost large-area UV/visible sensing in windows and facades of smart buildings. (C) 2012 Optical Society of America
Open Access
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
(Materials Research Society, 2011) Alagoz, A. S.; Genisel, M. F.; Foss, Steinar; Finstad, T. G.; Turan, R.
Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, high density and low cost of fabrication. Scaling limitations of top-down fabrication approaches can be overcome in next generation flash memories by replacing continuous floating gate with array of nanocrystals. Germanium (Ge) is a good candidate for nanocrystal based flash memories due its small band gap. In this work, we present effect of silicon dioxide (SiO 2) host matrix density on Ge nanocrystals morphology. Low density Ge+SiO 2 layers are deposited between high density SiO 2 layers by using off-angle magnetron sputter deposition. After high temperature post-annealing, faceted and elongated Ge nanocrystals formation is observed in low density layers. Effects of Ge concentration and annealing temperature on nanocrystal morphology and mean size were investigated by using transmission electron microscopy. Positive correlation between stress development and nanocrystal size is observed at Raman spectroscopy measurements. We concluded that non-uniform stress distribution on nanocrystals during growth is responsible from faceted and elongated nanocrystal morphology.
Open Access
Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure
(IOP Publishing, 2011) Yu, H.; Ozturk, M.; Demirel, P.; Cakmak, H.; Bolukbas, B.; Caliskan, D.; Özbay, Ekmel
The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor structure comprising a 7 nm thick nearly lattice-matched Al0.83In0.17 N barrier exhibits a sheet electron density of 2.0 x 10(13) cm(-2) with a high electron mobility of 1540 cm(2) V-1 s(-1). AnAl(0.83)In(0.17)N barrier HEMT device with 1 mu m gate length provides a current density of 1.0 A mm(-1) at V-GS = 0 V and an extrinsic transconductance of 242 mS mm(-1), which are remarkably improved compared to that of a conventional Al0.3Ga0.7N barrier HEMT. To investigate the thermal stability of the HEMT epi-structures, post-growth annealing experiments up to 800 degrees C have been applied to Al0.83In0.17N and Al0.3Ga0.7N barrier heterostructures. As expected, the electrical properties of an Al0.83In0.17N barrier HEMT structure showed less stability than that of an Al0.3Ga0.7N barrier HEMT to the thermal annealing. The structural properties of Al0.83In0.17N/GaN also showed more evidence for decomposition than that of the Al0.3Ga0.7N/GaN structure after 800 degrees C post-annealing.
Open Access
Nanoantenna coupled UV subwavelength photodtectors based on GaN
(Optical Society of America, 2012) Butun, S.; Cinel, N. A.; Özbay, Ekmel
The integration of nano structures with opto-electronic devices has many potential applications. It allows the coupling of more light into or out of the device while decreasing the size of the device itself. Such devices are reported in the VIS and NIR regions. However, making plasmonic structures for the UV region is still a challenge. Here, we report on a UV nano-antenna integrated metal semiconductor metal (MSM) photodetector based on GaN. We designed and fabricated Al grating structures. Well defined plasmonic resonances were measured in the reflectance spectra. Optimized grating structure integrated photodetectors exhibited more than sevenfold photocurrent enhancement. Finite difference time domain simulations revealed that both geometrical and plasmonic effects played role in photocurrent enhancement. (C) 2012 Optical Society of America
Open Access
One-pot synthesis of CdS nanoparticles in the channels of mesosructured silica films and monoliths
(American Chemical Society, 2005) Tura, C.; Coombs, N.; Dag, Ö.
Cd(II)-modified mesoporous silica films and/or monoliths synthesized in one pot using a true liquid crystalline (TLC) approach have been reacted with H2S gas to produce CdS-modified mesostructured nanocomposite materials (Nano-CdS/meso-SiO2). During this process, both the TLC and the metallotropic liquid crystalline (MLC) mesophase of metal salt ([Cd(H 2O)4](NO3)2)-nonionic surfactant (CnH2n+1- (OCH2CH2)mOH, CnEOm) systems were collectively used to incorporate large quantities of metal ions into the mesoporous silica film and monoliths. The effect of the cadmium nitrate concentration on the formation and structure of the mesoporous silica has also been investigated. The results show that at low salt concentrations, the mesoporous silica is anisotropic (hexagonal); however, at high salt concentration, the structure is isotropic (cubic or disordered). The freshly prepared CdS nanoparticles are reactive toward the surface acids that form during the H2S treatment. These surface acids also promote the degradation of the CdS nanopaticles. However, the CdS particles in the mesopores can be stabilized by washing out the acid sides or aging the samples for a period of time before the H2S reaction. The optical absorption edge of the CdS nanoparticle in the pores is sensitive to the composition and structure of the host. In this context, the materials were characterized using FTIR, micro-Raman, UV-visible absorption spectroscopy, POM, TEM, and PXRD techniques.
Open Access
Plasmonic backcontact grating for P3HT:PCBM organic solar cells enabling strong optical absorption increased in all polarizations
(Optical Society of America, 2011) Sefunc, M. A.; Okyay, Ali Kemal; Demir, Hilmi Volkan
In P3HT:PCBM based organic solar cells we propose and demonstrate numerically plasmonic backcontact grating architectures for strong optical absorption enhanced in both transverse-magnetic and transverse-electric polarizations. Even when the active material is partially replaced by the metallic grating (without increasing the active layer film thickness), we show computationally that the light absorption in thin-film P3HT:PCBM is increased by a maximum factor of similar to 21% considering both polarizations under AM1.5G solar radiation and over a half-maximum incidence angle of 45 degrees (where the enhancement drops to its half) compared to the same cell without a grating. This backcontact grating outperforms the typical plasmonic grating placed in PEDOT:PSS layer. (C)2011 Optical Society of America.
Open Access
Role of the exposed Pt active sites and BaO2 formation in nox storage reduction systems: a model catalyst study on BaOx/Pt(111)
(American Chemical Society, 2011) Vovk, E. I.; Emmez, E.; Erbudak, M.; Bukhtiyarov, V. I.; Ozensoy, E.
BaOx(0.5 MLE - 10 MLE)/Pt(111) (MLE: monolayer equivalent) surfaces were synthesized as model NOx storage reduction (NSR) catalysts. Chemical structure, surface morphology, and the nature of the adsorbed species on BaOx/Pt(111) surfaces were studied via X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low-energy electron diffraction (LEED). For θBaOx < 1 MLE, (2 2) or (1 2) ordered overlayer structures were observed on Pt(111), whereas BaO(110) surface termination was detected for θBaOx = 1.5 MLE. Thicker films (θBaOx g 2.5 MLE) were found to be amorphous. Extensive NO2 adsorption on BaOx(10 MLE)/Pt(111) yields predominantly nitrate species that decompose at higher temperatures through the formation of nitrites. Nitrate decomposition occurs on BaOx(10 MLE)/Pt(111) in two successive steps: (1) NO(g) evolution and BaO2 formation at 650 K and (2) NO(g) + O2(g) evolution at 700 K. O2(g) treatment of the BaOx(10 MLE)/ Pt(111) surface at 873 K facilitates the BaO2 formation and results in the agglomeration of BaOx domains leading to the generation of exposed Pt(111) surface sites. BaO2 formed on BaOx(10 MLE)/Pt(111) is stable even after annealing at 1073 K, whereas on thinner films (θBaOx = 2.5 MLE), BaO2 partially decomposes into BaO, indicating that small BaO2 clusters in close proximity of the exposed Pt(111) sites are prone to decomposition. Nitrate decomposition temperature decreases monotonically from 550 to 375 K with decreasing BaOx coverage within θBaOx = 0.5 to 1.0 MLE. Nitrate decomposition occurs at a rather constant temperature range of 650700 K for thicker BaOx overlayers (2.5 MLE < θBaOx < 10 MLE). These two distinctly characteristic BaOx-coveragedependent nitrate decomposition regimes are in very good agreement with the observation of the so-called “surface” and “bulk” barium nitrates previously reported for realistic NSR catalysts, clearly demonstrating the strong dependence of the nitrate thermal stability on the NOx storage domain size.
Open Access
Synthesis of mesoporous lithium titanate thin films and monoliths as an anode material for high-rate lithium-ion batteries
(Wiley-VCH Verlag, 2016) Balcı, F. M.; Kudu, Ö. U.; Yılmaz, E.; Dag, Ö.
Mesoporous Li4Ti5O12 (LTO) thin film is an important anode material for lithium-ion batteries (LIBs). Mesoporous films could be prepared by self-assembly processes. A molten-salt-assisted self-assembly (MASA) process is used to prepare mesoporous thin films of LTOs. Clear solutions of CTAB, P123, LiNO3, HNO3, and Ti(OC4H9)4 in ethanol form gel-like meso-ordered films upon either spin or spray coating. In the assembly process, the CTAB/P123 molar ratio of 14 is required to accommodate enough salt species in the mesophase, in which the LiI/P123 ratio can be varied between molar ratios of 28 and 72. Calcination of the meso-ordered films produces transparent mesoporous spinel LTO films that are abbreviated as Cxx-yyy-zzz or CAxx-yyy-zzz (C=calcined, CA=calcined–annealed, xx=LiI/P123 molar ratio, and yyy=calcination and zzz=annealing temperatures in Celsius) herein. All samples were characterized by using XRD, TEM, N2-sorption, and Raman techniques and it was found that, at all compositions, the LTO spinel phase formed with or without an anatase phase as an impurity. Electrochemical characterization of the films shows excellent performance at different current rates. The CA40-350-450 sample performs best among all samples tested, yielding an average discharge capacity of (176±1) mA h g−1 at C/2 and (139±4) mA h g−1 at 50 C and keeping 92 % of its initial discharge capacity upon 50 cycles at C/2.