Browsing by Subject "Crystal impurities"

Now showing 1 - 7 of 7

Open Access
Different behaviour of magnetic impurities in crystalline and amorphous states of superconductors
(Institute of Physics, 2002) Park, M.-A.; Savran, K.; Kim, Y.-J.
It has been observed that the effect of magnetic impurities in a superconductor is drastically different depending on whether the host superconductor is in the crystalline or the amorphous state. Based on the recent theory of Kim and Overhauser (KO), it is shown that as the system is getting disordered, the initial slope of the Tc depression is decreasing by a factor √ℓ/ξ0, when the mean free path ℓ becomes smaller than the BCS coherence length ξ0, which is in agreement with experimental findings. In addition, for a superconductor in a crystalline state in the presence of magnetic impurities the superconducting transition temperature Tc drops sharply from about 50% of Tc0 (for a pure system) to zero near the critical impurity concentration. This pure limit behaviour was indeed found by Roden and Zimmermeyer in crystalline Cd. Recently, Porto and Parpia have also found the same pure limit behaviour in superfluid He-3 in aerogel, which may be understood within the framework of the KO theory.
Open Access
Disorder and localization in the lowest Landau level in the presence of dilute point scatterers
(Pergamon Press, 1999) Gedik, Z.; Bayındır, Mehmet
We study the localization properties of a two-dimensional noninteracting electron gas in the presence of randomly distributed short-range scatterers in very high magnetic fields. We evaluate the participation number of the eigenstates obtained by exact diagonalization technique. At low impurity concentrations we obtain self-averaged values showing that all states, except those exactly at the Landau level, are localized with finite localization length. We conclude that in this dilute regime the localization length does not diverge. We also find that the maximum localization length increases exponentially with impurity concentration. Our calculations suggest that scaling behavior may be absent even for higher concentrations of scatterers.
Open Access
Effect of in-material losses on terahertz absorption, transmission, and reflection in photonic crystals made of polar dielectrics
(A I P Publishing LLC, 2015) Serebryannikov, A. E.; Nojima, S.; Alici, K. B.; Özbay, Ekmel
The effect of the material absorption factor on terahertz absorption (A), transmittance (T), and reflectance (R) for slabs of PhC that comprise rods made of GaAs, a polar dielectric, is studied. The main goal was to illustrate how critical a choice of the absorption factor for simulations is and to indicate the importance of the possible modification of the absorption ability by using either active or lossy impurities. The spectra of A, T, and R are strongly sensitive to the location of the polaritonic gap with respect to the photonic pass and stop bands connected with periodicity that enables the efficient combination of the effects of material and structural parameters. It will be shown that the spectra can strongly depend on the utilized value of the material absorption factor. In particular, both narrow and wide absorption bands may appear owing to a variation of the material parameters with a frequency in the vicinity of the polaritonic gap. The latter are often achieved at wideband suppression of transmission, so that an ultra-wide stop band can appear as a result of adjustment of the stop bands having different origin. The results obtained at simultaneous variation of the absorption factor and frequency, and angle of incidence and frequency, indicate the possibility of the existence of wide ranges of tolerance, in which the basic features do remain. This allows for mitigating the accuracy requirements for the absorption factor in simulations and promises the efficient absorption of nonmonochromatic waves and beams with a wide angular spectrum. Suppression of narrowband effects in transmission is demonstrated at rather large values of the absorption factor, when they appear due to either the defect modes related to structural defects or dispersion inspired variations of the material parameters in the vicinity of the polaritonic gap. Comparison with auxiliary structures helps one to detect the common features and differences of homogeneous slabs and slabs of a PhC, which are made of GaAs. © 2015 AIP Publishing LLC.
Open Access
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
(Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000) Gasanly, N. M.; Serpengüzel, A.; Aydınlı, A.; Baten, S. M. A.
The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. Analysis of the data indicates that the PL band is due to donor-acceptor recombination. A shallow acceptor level and a moderately deep donor level are, respectively, introduced at 0.012 eV above the top of the valence band and at 0.317 eV below the bottom of the conduction band. An energy-level diagram for radiative donor-acceptor pair recombination in TlGaSe2 layered single crystals is proposed.
Open Access
Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
(Institute of Physics Publishing Ltd., 1994) Tanatar, Bilal; Constantinou, N. C.
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
Open Access
Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
(Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö.
Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.
Open Access
A tool for pattern information extraction and defect quantification from crystal structures
(Elsevier, 2015) Okuyan, E.; Okuyan, E.
In this paper, we present a revised version of BilKristal 2.0 tool. We added defect quantification functionality to assess crystalline defects. We improved visualization capabilities by adding transparency support and runtime visibility sorting. Discovered bugs are fixed and small performance optimizations are made. New version program summary Program title: BilKristal 3.0 Catalogue identifier: ADYU-v3-0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADYU-v3-0.html Program obtainable from: CPC Program Library, Queen's University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 1868 923 No. of bytes in distributed program, including test data, etc.: 8854 507 Distribution format: tar.gz Programming language: C, C++, Microsoft.NET Framework 2.0 and OpenGL Libraries. Computer: Personal Computers with Windows operating system. Operating system: Windows XP or higher. RAM: 20-60 Megabytes. Classification: 8. Catalogue identifier of previous version: ADYU-v2-0 Journal reference of previous version: Comput. Phys. Comm. 185 (2014) 442 External routines: Microsoft.NET Framework 2.0. For the visualization tool, graphics card driver should also support OpenGL. Does the new version supersede the previous version?: Yes Nature of problem: Determining the crystal structure parameters of a material is a very important issue in crystallography. Knowing the crystal structure parameters helps the understanding of the physical behavior of material. For complex structures, particularly for materials which also contain local symmetry as well as global symmetry, obtaining crystal parameters can be very hard. Solution method: The tool extracts crystal parameters such as primitive vectors, basis vectors and identifies the space group from atomic coordinates of crystal structures. Reasons for new version: Additional features, Compatibility issues with newer development environments, Performance optimizations, Minor bug corrections. Summary of revisions:Defect quantification capability is added. The tool can process the imperfect crystal structures, finds and quantifies the crystalline defects. The tool is capable of finding positional defects, vacancy defects, substitutional impurities and interstitial impurities. The algorithms presented in [3] are used for defect quantification implementation.Transparency support is added to the visualization tool. Users are now allowed to set the transparency of each atom type individually.Runtime visibility sorting functionality is added to facilitate correct transparency computations.Visual Studio 2012 support is added. Visual Studio 2012 specific project files are created and the project is tested with this development environment.In visualization tool, an unused log file was created. This issue is corrected.In visualization tool, some OpenGL calls which are executed at every draw are changed to be executed only when they are needed, improving the visualization performance.Restrictions: Assumptions are explained in [1,2]. However, none of them can be considered as a restriction onto the complexity of the problem. Running time: The tool was able to process input files with more than a million atoms in less than 20 s on a PC with an Athlon quad-core CPU at 3.2 GHz using the default parameter values. References: [1] Erhan Okuyan, Ugur Güdükbay, Oguz Gülseren, Pattern information extraction from crystal structures, Comput. Phys. Comm. 176 (2007) 486. [2] Erhan Okuyan, Ugur Güdükbay, BilKristal 2.0: A tool for pattern information extraction from crystal structures, Comput. Phys. Comm. 185 (2014) 442. [3] Erhan Okuyan, Ugur Güdükbay, Ceyhun Bulutay, Karl-Heinz Heinig, MaterialVis: material visualization tool using direct volume and surface rendering techniques, J. Mol. Graphics Model. 50201450-60. © 2014 The Authors.