Browsing by Subject "Channel materials"

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    Thin-film ZnO charge-trapping memory cell grown in a single ALD step
    (Institute of Electrical and Electronics Engineers, 2012-10-26) Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, Ali Kemal
    A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.
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    TiO2 thin film transistor by atomic layer deposition
    (SPIE, 2013) Okyay, Ali Kemal; Oruç, Feyza B.; Çimen, Furkan; Aygün, Levent E.
    In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.