Browsing by Subject "Absorption enhancement"
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Item Open Access Absorption enhancement in InGaN-based photonic crystal-implemented solar cells(SPIE, 2012-07-26) Gundogdu, T. F.; Gokkavas, M.; Özbay, EkmelWe investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.061603]Item Open Access Absorption enhancement of molecules in the weak plasmon-exciton coupling regime(Optical Society of American (OSA), 2014) Balci, S.; Karademir, E.; Kocabas, C.; Aydınlı, AtillaWe report on the experimental and theoretical investigations of enhancing the optical absorption of organic molecules in the weak plasmon-exciton coupling regime. A metal-organic hybrid structure consisting of dye molecules embedded in the polymer matrix is placed in close vicinity to thin metal films. We have observed a transition from a weak coupling regime to a strong coupling one as the thickness of the metal layer increases. The results indicate that absorption of the self-assembled J-aggregate nanostructures can be increased in the weak plasmon-exciton coupling regime and strongly quenched in the strong coupling regime. A theoretical model based on the transfer-matrix method qualitatively confirms the experimental results obtained from polarization-dependent spectroscopic reflection measurements.Item Open Access An analysis for the broad-band absorption enhancement using plasmonic structures on uncooled infrared detector pixels(SPIE, 2012-05) Lüleç, S. Z.; Küçük, S. E.; Battal, Enes; Okyay, Ali Kemal; Tanrıkulu, M. Y.; Akın, T.This paper introduces an analysis on the absorption enhancement in uncooled infrared pixels using resonant plasmon modes in metal structures, and it reports, for the first time in literature, broad-band absorption enhancement using integrated plasmonic structures in microbolometers for unpolarized long-wave IR detection. Different plasmonic structures are designed and simulated on a stack of layers, namely gold, polyimide, and silicon nitride in order to enhance absorption at the long-wave infrared. The simulated structures are fabricated, and the reflectance measurements are conducted using an FTIR Ellipsometer in the 8-12 μm wavelength range. Finite difference time domain (FDTD) simulations are compared to experimental measurement results. Computational and experimental results show similar spectral reflection trends, verifying broad-band absorption enhancement in the spectral range of interest. Moreover, this paper computationally investigates pixel-wise absorption enhancement by plasmonic structures integrated with microbolometer pixels using the FDTD method. Special attention is given during the design to be able to implement the integrated plasmonic structures with the microbolometers without a need to modify the pre-determined microbolometer process flow. The optimized structure with plasmonic layer absorbs 84 % of the unpolarized radiation in the 8-12 μm spectral range on the average, which is a 22 % increase compared to a reference structure with no plasmonic design. Further improvement may be possible by designing multiply coupled resonant structures.Item Open Access Broadband absorption enhancement in an uncooled microbolometer infrared detector(SPIE, 2014) Kebapcı, B.; Dervişoğlu, Ö.; Battal, Enes; Okyay, Ali Kemal; Akın, T.This paper introduces a method for a broadband absorption enhancement in the LWIR range (8-12 μm), in single layer microbolometer pixels with 35 μm pitch. For the first time in the literature, this study introduces a very simple and low cost approach to enhance the absorption by embedding plasmonic structures at the same level as the already existing metallic layer of a microbolometer pixel. The metal layer comprises the electrode and the arm structures on the body. Even though the periodicity of the plasmonic structures is slightly disturbed by the placement of the electrodes and the connecting metal, the metal arms and the electrodes compensate for the lack of the periodicity contributing to the resonance by their coupling with the individual plasmonic resonators. Various plasmonic structures are designed with FDTD simulations. Individual, plasmonically modified microbolometer pixels are fabricated, and an increase in the average absorption due to surface plasmon excitation at Au/Si3N4 interfaces is observed. Plasmonic structures increase the average absorption from 78% to 82% and result in an overall enhancement of 5.1%. A good agreement between the simulation and the FTIR measurement results are obtained within the LWIR range. This work paves the way for integration of the plasmonic structures within conventional microbolometer devices for performance enhancement without introducing additional costs.Item Open Access Plasmonic nanoslit array enhanced metal-semiconductor-metal optical detectors(Institute of Electrical and Electronics Engineers, 2012-01-09) Eryilmaz, S. B.; Tidin, O.; Okyay, Ali KemalMetallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to resonant interference of surface plasmon modes at the metal-semiconductor interface. Horizontal surface plasmon modes were reported earlier to inhibit photodetector performance. We computationally show, however, that horizontal modes enhance the efficiency of surface devices despite reducing transmitted light in the far field.Item Open Access Triangular metallic gratings for large absorption enhancement in thin film Si solar cells(Optical Society of American (OSA), 2012) Battal, E.; Yogurt, T.A.; Aygun L.E.; Okyay, Ali KemalWe estimate high optical absorption in silicon thin film photovoltaic devices using triangular corrugations on the back metallic contact. We computationally show 21.9% overall absorptivity in a 100-nmthick silicon layer, exceeding any reported absorptivity using single layer gratings placed on the top or the bottom, considering both transverse electric and transverse magnetic polarizations and a wide spectral range (280 - 1100 nm). We also show that the overall absorptivity of the proposed scheme is relatively insensitive to light polarization and the angle of incidence. We also discuss the implications of potential fabrication process variations on such a device. © 2012 Optical Society of America.