Browsing by Subject "A. semiconductors"
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Item Open Access Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity(Pergamon Press, 1998) Gasanly, N. M.; Serpengüzel, A.; Gürlü, O.; Aydınlı, A.; Yılmaz, I.The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. © 1998 Elsevier Science Ltd. All rights reserved.Item Open Access Effect of cross-sectional geometry on the RPA plasmons of quantum wires(Pergamon Press, 1994) Bennett, C. R.; Tanatar, Bilal; Constantinou, N. C.; Babiker, M.The effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, elliptical and rectangular wires are employed within the infinite barrier approximation. It is found that for fixed cross-sectional area and linear electron concentration, the intrasubband plasmon energy is only marginally dependent on the wire geometry whereas the intersubband plasmon energy may change considerably due to its dependence on the electronic subband energy difference. © 1994.Item Open Access Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals(Pergamon Press, 1995) Allakhverdiev, K. R.; Gasanly, N. M.; Aydınlı, AtillaLow-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.