Browsing by Author "Yesilyurt, A."
Now showing 1 - 2 of 2
Results Per Page
Sort Options
Item Open Access Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers(IEEE, 2011-09-18) Atar, F. B.; Yesilyurt, A.; Onbasli, M. C.; Hanoglu, O.; Okyay, Ali KemalThe temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.Item Open Access Silicon-Germanium multi-quantum well photodetectors in the near infrared(Optical Society of American (OSA), 2012) Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali KemalSingle crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.