Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers

Abstract

The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.

Description
Keywords
Bolometers, Germanium, Quantum wells, Silicon
Citation