Browsing by Author "Suehle, J. S."
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Item Open Access Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems(Electrochemical Society, 2004) Sayan, S.; Bartynski, R.A.; Robertson J.; Suehle, J. S.; Vogel, E.; Nguyen, N. V.; Ehrstein, J.; Kopanski, J. J.; Süzer, Şefik; Holl, M. B.; Garfunkel, E.We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.Item Open Access Band alignment issues related to HfO2/SiO2/p-Si gate stacks(American Institute of Physics, 2004-12-15) Sayan, S.; Emge, T.; Garfunkel, E.; Zhao, X.; Wielunski, L.; Bartynski, R. A.; Vanderbilt, D.; Suehle, J. S.; Süzer, Şefik; Banaszak Holl, M.The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.