Browsing by Author "Sahin, H."

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Open Access
2D vibrational properties of epitaxial silicene on Ag(111)
(IOP Publishing, 2016-10) Solonenko, D.; Gordan, O. D.; Lay, G. L.; Sahin, H.; Cahangirov, S.; Zahn, D. R. T.; Vogt, P.
The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300°C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.
Open Access
Anisotropic electronic, mechanical, and optical properties of monolayer WTe2
(American Institute of Physics Inc., 2016) Torun, E.; Sahin, H.; Cahangirov, S.; Rubio, A.; Peeters, F. M.
Using first-principles calculations, we investigate the electronic, mechanical, and optical properties of monolayer WTe2. Atomic structure and ground state properties of monolayer WTe2 (Td phase) are anisotropic which are in contrast to similar monolayer crystals of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, WSe2, and MoTe2, which crystallize in the H-phase. We find that the Poisson ratio and the in-plane stiffness is direction dependent due to the symmetry breaking induced by the dimerization of the W atoms along one of the lattice directions of the compound. Since the semimetallic behavior of the Td phase originates from this W-W interaction (along the a crystallographic direction), tensile strain along the dimer direction leads to a semimetal to semiconductor transition after 1% strain. By solving the Bethe-Salpeter equation on top of single shot G0W0 calculations, we predict that the absorption spectrum of Td-WTe2 monolayer is strongly direction dependent and tunable by tensile strain.
Open Access
Bilayer SnS2: tunable stacking sequence by charging and loading pressure
(American Physical Society, 2016-03) Bacaksiz, C.; Cahangirov, S.; Rubio, A.; Senger, R. T.; Peeters, F. M.; Sahin, H.
Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS2, which is a recently synthesized monolayer metal dichalcogenide. Comparison of the 1H and 1T phases of monolayer SnS2 confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS2 is weaker than that of typical transition-metal dichalcogenides so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. A possible signature of the stacking order in the SnS2 bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS2. It is found that (i) the electric field increases the coupling between the layers at its preferred stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E field and under sufficient E field, the bilayer SnS2 can become a semimetal, (iii) the most favorable stacking order can be switched by charging, and (iv) a loading pressure exceeding 3 GPa changes the stacking order. The E-field tunable band gap and easily tunable stacking sequence of SnS2 layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.
Open Access
Debris removal during disaster response: a case for Turkey
(Elsevier, 2016) Sahin, H.; Kara, B. Y.; Karasan, O. E.
Debris occurs from the ruin and wreckage of structures during a disaster. Proper removal of debris is of great importance because it blocks roads and prohibits emergency aid teams from accessing disaster-affected regions. Poor disaster management, lack of efficiency and delays in debris removal cause disruptions in providing shelter, nutrition, healthcare and communication services to disaster victims, and more importantly, result in loss of lives. Due to the importance of systematic and efficient debris removal from the perspectives of improving disaster victims quality of life and allowing the transportation of emergency relief materials, the focus of this study is on providing emergency relief supplies to disaster-affected regions as soon as possible by unblocking roads through removing the accumulated debris. We develop a mathematical model for the problem that requires long CPU times for large instances. Since it is crucial to act quickly in an emergency case, we also propose a heuristic methodology that solves instances with an average gap of 1% and optimum ratio of 80.83%.
Open Access
Frictional figures of merit for single layered nanostructures
(American Physical Society, 2012) Cahangirov, S.; Ataca, C.; Topsakal, M.; Sahin, H.; Çıracı, Salim
We determine the frictional figures of merit for a pair of layered honeycomb nanostructures, such as graphane, fluorographene, MoS 2 and WO 2 moving over each other, by carrying out ab initio calculations of interlayer interaction under constant loading force. Using the Prandtl-Tomlinson model we derive the critical stiffness required to avoid stick-slip behavior. We show that these layered structures have low critical stiffness even under high loading forces due to their charged surfaces repelling each other. The intrinsic stiffness of these materials exceeds critical stiffness and thereby the materials avoid the stick-slip regime and attain nearly dissipationless continuous sliding. Remarkably, tungsten dioxide displays a much better performance relative to others and heralds a potential superlubricant. The absence of mechanical instabilities leading to conservative lateral forces is also confirmed directly by the simulations of sliding layers. © 2012 American Physical Society.
Open Access
Hydrogen-induced sp2-sp3 rehybridization in epitaxial silicene
(American Physical Society, 2017) Solonenko, D.; Dzhagan, V.; Cahangirov, S.; Bacaksiz, C.; Sahin, H.; Zahn, D. R. T.; Vogt, P.
We report on the hydrogenation of (3×3)/(4×4) silicene epitaxially grown on Ag(111) studied by in situ Raman spectroscopy and state-of-the-art ab initio calculations. Our results demonstrate that hydrogenation of (3×3)/(4×4) silicene leads to the formation of two different atomic structures which exhibit distinct spectral vibrational modes. Raman selection rules clearly show that the Si atoms undergo a rehybridization in both cases from a mixed sp2-sp3 to a dominating sp3 state increasing the distance between the two silicene sublattices. This results in a softening of the in-plane and a stiffening of the out-of-plane phonon modes. Nevertheless, hydrogenated epitaxial silicene retains a two-dimensional nature and hence can be considered as epitaxial silicane. The level of hydrogenation can be determined by the intensity ratio of the Raman modes with different symmetries. © 2017 American Physical Society.
Open Access
Monolayers of MoS2 as an oxidation protective nanocoating material
(AIP Publishing, 2014-08-26) Sen, H. S.; Sahin, H.; Peeters, F. M.; Durgun, Engin
First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS2 monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS2 monolayer is prevented by a very high diffusion barrier indicating that MoS2 can serve as a protective layer for oxidation. The analysis is extended to WS2 and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS2 and WS2 monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Open Access
Realization of a p-n junction in a single layer boron-phosphide
(Royal Society of Chemistry, 2015) Çakır, D.; Kecik, D.; Sahin, H.; Durgun, Engin; Peeters, F. M.
Two-dimensional (2D) materials have attracted growing interest due to their potential use in the next generation of nanoelectronic and optoelectronic applications. On the basis of first-principles calculations based on density functional theory, we first investigate the electronic and mechanical properties of single layer boron phosphide (h-BP). Our calculations show that h-BP is a mechanically stable 2D material with a direct band gap of 0.9 eV at the K-point, promising for both electronic and optoelectronic applications. We next investigate the electron transport properties of a p-n junction constructed from single layer boron phosphide (h-BP) using the non-equilibrium Green's function formalism. The n- and p-type doping of BP are achieved by substitutional doping of B with C and P with Si, respectively. C(Si) substitutional doping creates donor (acceptor) states close to the conduction (valence) band edge of BP, which are essential to construct an efficient p-n junction. By modifying the structure and doping concentration, it is possible to tune the electronic and transport properties of the p-n junction which exhibits not only diode characteristics with a large current rectification but also negative differential resistance (NDR). The degree of NDR can be easily tuned via device engineering.