Browsing by Author "Ren, S."

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • Thumbnail Image
    ItemOpen Access
    High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
    (IEEE, 2009) Okyay, Ali Kemal; Onbaşlı, M. Cengiz; Ercan, Burcu; Yu H.-Y.; Ren, S.; Miller, D.A.B.; Saraswat, K.C.; Nayfeh, A.M.
    Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.
  • Thumbnail Image
    ItemOpen Access
    High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration
    (Institute of Electrical and Electronics Engineers, 2009) Yu, H.-Y.; Ren, S.; Jung, W. S.; Okyay, Ali Kemal; Miller, D. A. B.; Saraswat, K. C.
    We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.