Browsing by Author "Nayfeh, A.M."

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    High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
    (IEEE, 2009) Okyay, Ali Kemal; Onbaşlı, M. Cengiz; Ercan, Burcu; Yu H.-Y.; Ren, S.; Miller, D.A.B.; Saraswat, K.C.; Nayfeh, A.M.
    Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.
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    Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
    (IEEE, 2010) Onbasli, M.C.; Yesilyurt, Alper; Yu H.Y.; Nayfeh, A.M.; Okyay, Ali Kemal
    Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.