Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

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Silicon-germanium multi-quantum wells for extended functionality and lower cost integration.pdf (437.37 KB)

Date

2010

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2010 23rd Annual Meeting of the IEEE Photonics Society

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IEEE

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Pages

530 - 531

Language

English

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Conference Paper

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Abstract

Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.

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Keywords

Epitaxial techniques, High-quality films, Low-dislocation density, Low-leakage current, Lower cost, Multiquantum wells, Nanostructural, Quantum well, Silicon germanium, TEM, XPS, Germanium, Semiconductor quantum wells

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http://hdl.handle.net/11693/28434

Published Version (Please cite this version)

http://dx.doi.org/10.1109/PHOTONICS.2010.5698995

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Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - UNAM