Browsing by Author "Kürüm, U."
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Item Open Access Crystallization of Ge in SiO2 matrix by femtosecond laser processing(American Vacuum Society, 2012-01-19) Salihoglu, O.; Kürüm, U.; Yaglioglu, H. G.; Elmali, A.; Aydınlı, AtillaGermanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed.Item Open Access Electrochemically tunable ultrafast optical response of graphene oxide(A I P Publishing LLC, 2011) Kürüm, U.; Ekiz, O. Ö.; Yaglioglu, H. G.; Elmali, A.; Ürel, M.; Güner, H.; Mızrak, A. K.; Ortaç, B.; Dâna, A.We demonstrate reversible and irreversible changes in the ultrafast optical response of multilayer graphene oxide thin films upon electrical and optical stimulus. The reversible effects are due to electrochemical modification of graphene oxide, which allows tuning of the optical response by externally applied bias. Increasing the degree of reduction in graphene oxide causes excited state absorption to gradually switch to saturable absorption for shorter probe wavelengths. Spectral and temporal properties as well as the sign of the ultrafast response can be tuned either by changing the applied bias or exposing to high intensity femtosecond pulses. © 2011 American Institute of Physics.Item Open Access Femtosecond laser crystallization of amorphous Ge(American Institute of Physics, 2011) Salihoglu, O.; Kürüm, U.; Yaglıoglu, G. H.; Elmali, A.; Aydınlı, AtillaUltrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm -1 as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.