Crystallization of Ge in SiO2 matrix by femtosecond laser processing
Date
2012-01-19
Editor(s)
Advisor
Supervisor
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Instructor
Source Title
Journal of Vacuum Science and Technology B
Print ISSN
1071-1023
Electronic ISSN
Publisher
American Vacuum Society
Volume
30
Issue
1
Pages
11807-1 - 011807-5
Language
English
Type
Journal Title
Journal ISSN
Volume Title
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Abstract
Germanium nanocrystals embedded in a siliconoxide matrix has been fabricated by single femtosecond laser pulse irradiation of germanium doped SiO2 thin films deposited with plasma enhanced chemical vapor deposition. SEM and AFM are used to analyze surface modification induced by laser irradiation. Crystallization of Ge in the oxide matrix is monitored with the optic phonon at 300 cm(-1) as a function of laser fluence. Both the position the linewidth of the phonon provides clear signature for crystallization of Ge. In PL experiments, strong luminescence around 600 nm has been observed.