Browsing by Author "Consorte, C. D."
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Item Open Access Model study of a surfactant on the GaAs(100) surface(Elsevier, 2002-11-01) Consorte, C. D.; Fong, C. Y.; Watson, M. D.; Yang, L. H.; Çıracı, SalimBased on the facts that: (a) the transverse acoustic vibrational branch frequency is softened at the Brillouin zone boundaries of crystalline GaAs; (b) at the surface, the Ga-As bond is stronger than Ga-Te bond; and (c) the requirement that the final bond orientation of the Te surfactant should be rotated by 90degrees with respect to its initial orientation, we carried out a model study of an exchange process in epitaxial growth of GaAs (100). Even with very restrictive conditions imposed on the atomic movements, this study explains why Te is an effective surfactant for this type of growth. (C) 2002 Elsevier Science B.V. All rights reserved.Item Open Access Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100)(American Physical Society, 2001) Consorte, C. D.; Fong, C. Y.; Watson, M. D.; Yang, L. H.; Çıracı, SalimUsing first-principles calculations and experimental evidence concerning the essential environment for surfactant-mediated epitaxial growth on the GaAs/Te~100! surface, we determine a short-ranged reaction path for the As↔Te exchange that is energetically favorable and prepares the surface for continued layer-by-layer growth. Furthermore, we explain the required partial coverage of the surfactant atoms as well as the required presence of both As and Ga adatoms.