Reaction path for Te during surfactant-mediated epitaxial growth of GaAs (100)
Date
2001
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Physical Review B - Condensed Matter and Materials Physics
Print ISSN
1098-0121
Electronic ISSN
1550-235X
Publisher
American Physical Society
Volume
63
Issue
4
Pages
041301-1 - 041301-4
Language
English
Type
Journal Title
Journal ISSN
Volume Title
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Abstract
Using first-principles calculations and experimental evidence concerning the essential environment for surfactant-mediated epitaxial growth on the GaAs/Te~100! surface, we determine a short-ranged reaction path for the As↔Te exchange that is energetically favorable and prepares the surface for continued layer-by-layer growth. Furthermore, we explain the required partial coverage of the surfactant atoms as well as the required presence of both As and Ga adatoms.