Model study of a surfactant on the GaAs(100) surface
Date
2002-11-01
Editor(s)
Advisor
Supervisor
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Instructor
Source Title
Materials Science and Engineering B: Advanced Functional Solid-state Materials
Print ISSN
0921-5107
Electronic ISSN
Publisher
Elsevier
Volume
96
Issue
2
Pages
141 - 144
Language
English
Type
Journal Title
Journal ISSN
Volume Title
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Abstract
Based on the facts that: (a) the transverse acoustic vibrational branch frequency is softened at the Brillouin zone boundaries of crystalline GaAs; (b) at the surface, the Ga-As bond is stronger than Ga-Te bond; and (c) the requirement that the final bond orientation of the Te surfactant should be rotated by 90degrees with respect to its initial orientation, we carried out a model study of an exchange process in epitaxial growth of GaAs (100). Even with very restrictive conditions imposed on the atomic movements, this study explains why Te is an effective surfactant for this type of growth. (C) 2002 Elsevier Science B.V. All rights reserved.