Browsing by Author "Ata, E. P."

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    100-GHz resonant cavity enhanced Schottky photodiodes
    (Institute of Electrical and Electronics Engineers, 1998) Onat, B. M.; Gökkavas, M.; Özbay, Ekmel; Ata, E. P.; Towe, E.; Ünlü, M. S.
    Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al, In) GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated.
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    Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes
    (Institute of Electrical and Electronics Engineers, 1999-02) Gökkavas, M.; Onat, B. M.; Özbay, Ekmel; Ata, E. P.; Xu, J.; Towe, E.; Ünlü, M. S.
    Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD's with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD's allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD's, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs-AlAs-InGaAs RCE Schottky PD's designed for 900-nm wavelength.