Design and optimization of high-speed resonant cavity enhanced Schottky photodiodes

Date
1999-02
Advisor
Instructor
Source Title
IEEE Journal of Quantum Electronics
Print ISSN
0018-9197
Electronic ISSN
Publisher
Institute of Electrical and Electronics Engineers
Volume
35
Issue
2
Pages
208 - 215
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD's with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD's allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD's, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs-AlAs-InGaAs RCE Schottky PD's designed for 900-nm wavelength.

Course
Other identifiers
Book Title
Keywords
High-speed optoelectronics, Photodetectors, Photodiodes, Schottky diodes, Resonant cavity
Citation
Published Version (Please cite this version)