A hole modulator for InGaN/GaN light-emitting diodes
buir.contributor.author | Demir, Hilmi Volkan | |
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
dc.citation.epage | 063501-5 | en_US |
dc.citation.issueNumber | 6 | en_US |
dc.citation.spage | 063501-1 | en_US |
dc.citation.volumeNumber | 106 | en_US |
dc.contributor.author | Zhang, Z-H. | en_US |
dc.contributor.author | Kyaw, Z. | en_US |
dc.contributor.author | Liu W. | en_US |
dc.contributor.author | Ji Y. | en_US |
dc.contributor.author | Wang, L. | en_US |
dc.contributor.author | Tan S.T. | en_US |
dc.contributor.author | Sun, X. W. | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.date.accessioned | 2016-02-08T10:00:50Z | |
dc.date.available | 2016-02-08T10:00:50Z | |
dc.date.issued | 2015 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:00:50Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en |
dc.identifier.doi | 10.1063/1.4908118 | en_US |
dc.identifier.eissn | 1077-3118 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/11693/22492 | |
dc.language.iso | English | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4908118 | en_US |
dc.source.title | Applied Physics Letters | en_US |
dc.subject | Charge injection | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Electron injection | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Heterojunction bipolar transistors | en_US |
dc.subject | Hole concentration | en_US |
dc.subject | Light modulators | en_US |
dc.subject | Modulators | en_US |
dc.subject | Semiconducting indium compounds | en_US |
dc.subject | Semiconductor quantum wells | en_US |
dc.subject | Active regions | en_US |
dc.subject | Built - in electric fields | en_US |
dc.subject | Electron blocking layer | en_US |
dc.subject | Improved hole injection | en_US |
dc.subject | Ingan/gan leds | en_US |
dc.subject | Ingan/gan lightemitting diodes (LEDs) | en_US |
dc.subject | Optical performance | en_US |
dc.subject | Valance band barriers | en_US |
dc.subject | Light emitting diodes | en_US |
dc.title | A hole modulator for InGaN/GaN light-emitting diodes | en_US |
dc.type | Article | en_US |
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