Soft x-ray photoemission studies of the HfO2/SiO2/Si system

Simple item page
buir.contributor.authorSüzer, Şefik
dc.citation.epage2137en_US
dc.citation.issueNumber12en_US
dc.citation.spage2135en_US
dc.citation.volumeNumber80en_US
dc.contributor.authorSayan, S.en_US
dc.contributor.authorGarfunkel, E.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T10:33:34Z
dc.date.available2016-02-08T10:33:34Z
dc.date.issued2002en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractSoft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems. © 2002 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1450049en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24729
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1450049en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectSoft x - ray photoelectron spectroscopyen_US
dc.subjectSoft x - ray photoemissionen_US
dc.subjectValence - band maximumsen_US
dc.subjectValence - band offseten_US
dc.subjectHafnium oxidesen_US
dc.subjectSiliconen_US
dc.subjectValence bandsen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectSilicon compoundsen_US
dc.titleSoft x-ray photoemission studies of the HfO2/SiO2/Si systemen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Soft x-ray photoemission studies of the HfO2 SiO2 Si system.pdf
Size:
249.36 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Department of Chemistry