Soft x-ray photoemission studies of the HfO2/SiO2/Si system

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Soft x-ray photoemission studies of the HfO2 SiO2 Si system.pdf (249.36 KB)

Date

2002

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Source Title

Applied Physics Letters

Print ISSN

0003-6951

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Publisher

American Institute of Physics

Volume

80

Issue

12

Pages

2135 - 2137

Language

English

Type

Article

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Abstract

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems. © 2002 American Institute of Physics.

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Keywords

Soft x - ray photoelectron spectroscopy , Soft x - ray photoemission , Valence - band maximums , Valence - band offset , Hafnium oxides , Silicon , Valence bands , X ray photoelectron spectroscopy , Silicon compounds

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http://hdl.handle.net/11693/24729

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http://dx.doi.org/10.1063/1.1450049

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Department of Chemistry