A study on GaN-based betavoltaic batteries

buir.contributor.authorToprak, Ahmet
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidToprak, Ahmet|0000-0003-4879-8296
buir.contributor.orcidYılmaz, Doğan|0000-0001-6102-4477
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage7en_US
dc.citation.issueNumber12en_US
dc.citation.spage1en_US
dc.citation.volumeNumber37en_US
dc.contributor.authorToprak, Ahmet
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T13:52:41Z
dc.date.available2023-02-28T13:52:41Z
dc.date.issued2022-10-27
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, a GaN-based betavoltaic epitaxial structure was grown by metal–organic chemical vapor deposition and a p-type ohmic contact was studied for different Ni/Au metal thickness ratios, temperature dependent in N2:O2 (1:1) gas atmosphere and different surface treatments for this epitaxial structure. Transfer length method measurements were done after each different process condition in order to check specific contact resistivities. GaN-based betavoltaic batteries were fabricated and a scanning electron microscope (SEM) was used as an electron source to test these devices. For this purpose, devices connected to a printed circuit board were exposed to an electron current of 1.5 nA with 17 keV energy in the SEM. For 1 × 1 mm2 devices, a dark current value of 2.8 pA at 0 V, fill factor of 0.35, maximum power conversion efficiency of 3.92%, and maximum output power of 1 µW were obtained.en_US
dc.identifier.doi10.1088/1361-6641/ac9698en_US
dc.identifier.eissn1361-6641
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/111955
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1088/1361-6641/ac9698en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectGaNen_US
dc.subjectBetavoltaicen_US
dc.subjectBatteriesen_US
dc.titleA study on GaN-based betavoltaic batteriesen_US
dc.typeArticleen_US
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