808 nm broad-area laser diodes designed for high efficiency at high-temperature operation

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buir.contributor.authorDemir, Abdullah
buir.contributor.orcidDemir, Abdullah|0000-0003-4678-0084
dc.citation.epage11en_US
dc.citation.spage1en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorLan, Y.
dc.contributor.authorYang, G.
dc.contributor.authorLiu, Y.
dc.contributor.authorZhao, Y.
dc.contributor.authorWang, Z.
dc.contributor.authorLi, T.
dc.contributor.authorDemir, Abdullah
dc.date.accessioned2022-02-09T13:57:25Z
dc.date.available2022-02-09T13:57:25Z
dc.date.issued2021-09-21
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractSemiconductor lasers with high power conversion efficiency (PCE) and output power are heavily investigated driven by more energy-efficient commercial applications. In this paper, an asymmetric broad area laser (A-BAL) design is studied and compared with a conventional symmetric broad area laser (S-BAL) design for 808 nm single emitter laser diodes. We present a comparative theoretical and experimental investigation by studying the thermal effects on the laser parameters. The output characteristics and efficiency loss paths for the designs were analyzed. The leakage of carriers was identified as the primary source of the PCE reduction with temperature. Suppressing this leakage by optimization of the A-BAL design, a record continuous-wave PCE of 68% at 25 °C and 60.4% at 75 °C were achieved for a single emitter laser with 10 W output power. These devices deliver high efficiency at high temperatures with reliable operation achieving 2000 h of an accelerated aging lifetime without failures.en_US
dc.description.provenanceSubmitted by Burcu Böke (tburcu@bilkent.edu.tr) on 2022-02-09T13:57:24Z No. of bitstreams: 1 808_nm_broad_area_laser_diodes_designed_for_high_efficiency_at_high_temperature_operation.pdf: 2393820 bytes, checksum: bd8896a48e87a82e80df93d5adf82962 (MD5)en
dc.description.provenanceMade available in DSpace on 2022-02-09T13:57:25Z (GMT). No. of bitstreams: 1 808_nm_broad_area_laser_diodes_designed_for_high_efficiency_at_high_temperature_operation.pdf: 2393820 bytes, checksum: bd8896a48e87a82e80df93d5adf82962 (MD5) Previous issue date: 2021-09-21en
dc.identifier.doi10.1088/1361-6641/ac2160en_US
dc.identifier.eissn1361-6641
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/77188
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1088/1361-6641/ac2160en_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectSemiconductor laseren_US
dc.subjectLaser diodeen_US
dc.subjectHigh poweren_US
dc.subjectHigh efficiencyen_US
dc.subject808 nmen_US
dc.title808 nm broad-area laser diodes designed for high efficiency at high-temperature operationen_US
dc.typeArticleen_US

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