High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.author | Bıyıklı, Necmi | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 164 | en_US |
dc.citation.spage | 159 | en_US |
dc.contributor.author | Kimukin, İbrahim | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.contributor.author | Kartaloğlu, Tolga | en_US |
dc.contributor.author | Aytür, Orhan | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.coverage.spatial | San Francisco, Unied States | |
dc.date.accessioned | 2016-02-08T11:54:33Z | |
dc.date.available | 2016-02-08T11:54:33Z | |
dc.date.issued | 2003-04 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Department of Physics | en_US |
dc.description | Date of Conference: 22-24 April, 2003 | |
dc.description | Conference name: 2003 MRS Spring Meeting & Exhibit Symposium C—New Applications for Wide-Bandgap Semiconductors | |
dc.description.abstract | We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:54:33Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2003 | en |
dc.identifier.doi | 10.1557/PROC-764-C3.22 | |
dc.identifier.issn | 0272-9172 | |
dc.identifier.uri | http://hdl.handle.net/11693/27480 | |
dc.language.iso | English | en_US |
dc.publisher | Materials Research Society | |
dc.relation.isversionof | https://doi.org/10.1557/PROC-764-C3.22 | |
dc.source.title | Materials Research Society Symposium - Proceedings | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Cavity resonators | en_US |
dc.subject | Energy gap | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | Mirrors | en_US |
dc.subject | Refractive index | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Semiconducting aluminum compounds | en_US |
dc.subject | Thin films | en_US |
dc.subject | Ultraviolet detectors | en_US |
dc.subject | Fast pulse responses | en_US |
dc.subject | Reflectivity measurements | en_US |
dc.subject | Resonant peaks | en_US |
dc.subject | Photodiodes | en_US |
dc.title | High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes | en_US |
dc.type | Conference Paper | en_US |
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