High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes

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High_performance_ALGaN_based_visible_blind_resonant_cavity_enhanced_Schottky_photodiodes.pdf (219.23 KB)

Date

2003-04

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Source Title

Materials Research Society Symposium - Proceedings

Print ISSN

0272-9172

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Materials Research Society

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159 - 164

Language

English

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Conference Paper

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Abstract

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

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Keywords

Bandwidth , Cavity resonators , Energy gap , Gallium nitride , Indium compounds , Mirrors , Refractive index , Schottky barrier diodes , Semiconducting aluminum compounds , Thin films , Ultraviolet detectors , Fast pulse responses , Reflectivity measurements , Resonant peaks , Photodiodes

Citation

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http://hdl.handle.net/11693/27480

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https://doi.org/10.1557/PROC-764-C3.22

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Department of Electrical and Electronics Engineering
Department of Physics