High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes

Date
2003-04
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Materials Research Society Symposium - Proceedings
Print ISSN
0272-9172
Electronic ISSN
Publisher
Materials Research Society
Volume
Issue
Pages
159 - 164
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Series
Abstract

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Course
Other identifiers
Book Title
Keywords
Bandwidth, Cavity resonators, Energy gap, Gallium nitride, Indium compounds, Mirrors, Refractive index, Schottky barrier diodes, Semiconducting aluminum compounds, Thin films, Ultraviolet detectors, Fast pulse responses, Reflectivity measurements, Resonant peaks, Photodiodes
Citation
Published Version (Please cite this version)