Absorption enhancement in InGaN-based photonic crystal-implemented solar cells

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage061603-9en_US
dc.citation.issueNumber1en_US
dc.citation.spage061603-1en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorGundogdu, T. F.en_US
dc.contributor.authorGokkavas, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:01:11Z
dc.date.available2015-07-28T12:01:11Z
dc.date.issued2012-07-26en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe investigate the absorption characteristics of InGaN solar cells with high indium (0.8) content and a one-dimensional periodic nano-scale pattern (implemented) in the InGaN layer theoretically. The short-circuit current of our InGaN-based solar cell structure is calculated for different lattice constant, etch depth, and fill factor values. A substantial increase in the absorption (17.5% increase in short-circuit current) is achieved when the photonic crystal pattern is thoroughly optimized. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JNP.6.061603]en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:01:11Z (GMT). No. of bitstreams: 1 10.1117-1.JNP.6.061603.pdf: 2068992 bytes, checksum: f4df90fc7cc820e8788bd86306433621 (MD5)en
dc.identifier.doi10.1117/1.JNP.6.061603en_US
dc.identifier.issn1934-2608
dc.identifier.urihttp://hdl.handle.net/11693/12376
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/1.JNP.6.061603en_US
dc.source.titleJournal of Nanophotonicsen_US
dc.subjectInGaNen_US
dc.subjectSolar cellen_US
dc.subjectPhotonic crystalen_US
dc.subjectAbsorption enhancementen_US
dc.titleAbsorption enhancement in InGaN-based photonic crystal-implemented solar cellsen_US
dc.typeArticleen_US

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