Kinetic analysis of 2D Mo2C crystal growth via CVD

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buir.contributor.authorÇaylan, Ömer Refet
buir.contributor.orcidÇaylan, Ömer Refet|0000-0001-5352-0112
dc.citation.epage105976-8en_US
dc.citation.issueNumber10
dc.citation.spage105976-1
dc.citation.volumeNumber98
dc.contributor.authorBuke, G. C.
dc.contributor.authorÇaylan, Ömer Refet
dc.contributor.authorOgurtani, O. T.
dc.date.accessioned2024-03-13T07:57:45Z
dc.date.available2024-03-13T07:57:45Z
dc.date.issued2023-09-28
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.description.abstractWe investigated the growth mechanism of 2D Mo2C crystals by chemical vapor deposition (CVD) under various time and temperature conditions. The growth kinetics and mechanism of Mo2C on Cu via chemical vapor deposition (CVD) were investigated using a modified Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. To analyze the surface coverage, we employed scanning electron microscopy (SEM) and applied the modified JMAK model to determine the growth rate and activation energy. The growth rate of Mo2C exhibited temperature-dependent behavior, described by the Arrhenius relationship, with an apparent activation energy of 4 eV. The Avrami plot exhibited an exponent of 3 indicating a complex process with nucleation and growth.
dc.identifier.doi10.1088/1402-4896/acf9ce
dc.identifier.eissn1402-4896
dc.identifier.issn0031-8949
dc.identifier.urihttps://hdl.handle.net/11693/114661
dc.language.isoen
dc.publisherInstitute of Physics Publishing Ltd.
dc.relation.isversionofhttps://dx.doi.org/10.1088/1402-4896/acf9ce
dc.rightsCC BY 4.0 DEED (Attribution 4.0 International)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.source.titlePhysica Scripta
dc.subjectChemical vapor deposition
dc.subjectGrowth kinetics
dc.subjectJmak model
dc.subjectMolybdenum carbide
dc.subjectTwo-dimensional materials
dc.titleKinetic analysis of 2D Mo2C crystal growth via CVD
dc.typeArticle

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