Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage243505-3en_US
dc.citation.issueNumber24en_US
dc.citation.spage243505-1en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorTekcan, B.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2015-07-28T12:02:53Z
dc.date.available2015-07-28T12:02:53Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (ION/I OFF) of 103 and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperature reported for GaN based transistors, so far. © 2014 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4884061en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12762
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4884061en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectBudget Controlen_US
dc.subjectCathodesen_US
dc.subjectDepositionen_US
dc.subjectGallium Nitrideen_US
dc.subjectPulsed Laser Depositionen_US
dc.subjectThin Filmsen_US
dc.subjectZinc Sulfideen_US
dc.titleLow temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channelsen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)