Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors

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dc.citation.epage120en_US
dc.citation.issueNumberSpecial issue: Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices IIIen_US
dc.citation.spage117en_US
dc.citation.volumeNumber541en_US
dc.contributor.authorChen W.en_US
dc.contributor.authorMcCarthy, K.G.en_US
dc.contributor.authorO'Brien, S.en_US
dc.contributor.authorÇopuroǧlu, Mehmeten_US
dc.contributor.authorCai, M.en_US
dc.contributor.authorWinfield, R.en_US
dc.contributor.authorMathewson, A.en_US
dc.date.accessioned2016-02-08T12:07:32Z
dc.date.available2016-02-08T12:07:32Z
dc.date.issued2013en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractThis work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. © 2012 Elsevier B.V.en_US
dc.identifier.doi10.1016/j.tsf.2012.12.092en_US
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/11693/27982
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.tsf.2012.12.092en_US
dc.source.titleThin Solid Filmsen_US
dc.subjectLoss tangenten_US
dc.subjectPMNTen_US
dc.subjectSol-gelen_US
dc.subjectThin filmsen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectHigh density capacitorsen_US
dc.subjectHigh temperatureen_US
dc.subjectLead magnesium niobate-lead titanatesen_US
dc.subjectLoss tangenten_US
dc.subjectPerovskite phaseen_US
dc.subjectPMNTen_US
dc.subjectSilicon substratesen_US
dc.subjectAnnealingen_US
dc.subjectMagnesiumen_US
dc.subjectPerovskiteen_US
dc.subjectSol-gel processen_US
dc.subjectSol-gelsen_US
dc.subjectThin filmsen_US
dc.subjectElectric propertiesen_US
dc.titleEffect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitorsen_US
dc.typeArticleen_US

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