Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage01A125-6en_US
dc.citation.issueNumber1en_US
dc.citation.spage01A125-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorGungor, N.en_US
dc.contributor.authorHaider A.en_US
dc.contributor.authorKizir S.en_US
dc.contributor.authorLeghari, S. A.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2018-04-12T11:11:00Z
dc.date.available2018-04-12T11:11:00Z
dc.date.issued2016-02en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractGallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N2/H2 plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E1(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.en_US
dc.identifier.doi10.1116/1.4936230en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/37352
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1116/1.4936230en_US
dc.source.titleJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Filmsen_US
dc.subjectAtomic layer depositionen_US
dc.subjectCathodesen_US
dc.subjectComposite structuresen_US
dc.subjectDecompositionen_US
dc.subjectDepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectFilm growthen_US
dc.subjectGallium nitrideen_US
dc.subjectRefractive indexen_US
dc.subjectSubstratesen_US
dc.subjectSurface roughnessen_US
dc.subjectThin filmsen_US
dc.subjectChemical compositionsen_US
dc.subjectCompressive strainen_US
dc.subjectCrystalline phasisen_US
dc.subjectDecomposition limited growthsen_US
dc.subjectGallium nitride filmsen_US
dc.subjectSelf-limiting growthsen_US
dc.subjectSubstrate temperatureen_US
dc.subjectTemperature-dependent material propertiesen_US
dc.subjectPulsed laser depositionen_US
dc.titleSubstrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer depositionen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
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