Resistive Switching based electro-optical modulation

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage1154en_US
dc.citation.issueNumber12en_US
dc.citation.spage1149en_US
dc.citation.volumeNumber2en_US
dc.contributor.authorBattal, E.en_US
dc.contributor.authorOzcan, A.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2015-07-28T12:02:52Z
dc.date.available2015-07-28T12:02:52Z
dc.date.issued2014-09-08en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractResistive switching enables optical modulation via atomic scale modifications that induce change in the refractive index of active device materials. The formation of filaments and migration of atoms around these filaments between high resistance and low resistance states results in the modulation of the free carrier concentration and, hence, the optical constants of the material.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:02:52Z (GMT). No. of bitstreams: 1 8370.pdf: 1295616 bytes, checksum: bb98be27717c768dd228000471eb1073 (MD5)en
dc.identifier.doi10.1002/adom.201400209en_US
dc.identifier.issn2195-1071
dc.identifier.urihttp://hdl.handle.net/11693/12755
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/adom.201400209en_US
dc.source.titleAdvanced Optical Materialsen_US
dc.subjectWave-guideen_US
dc.subjectMemoryen_US
dc.subjectDevicesen_US
dc.subjectSiliconen_US
dc.subjectOxideen_US
dc.subjectTunabilityen_US
dc.subjectUltrafasten_US
dc.subjectModelen_US
dc.titleResistive Switching based electro-optical modulationen_US
dc.typeArticleen_US

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