High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage122en_US
dc.citation.issueNumber1en_US
dc.citation.spage117en_US
dc.citation.volumeNumber49en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorUnlu, M. S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:24:35Z
dc.date.available2016-02-08T10:24:35Z
dc.date.issued2005-01en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractAl0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30 μm diameter devices exhibited leakage current below 3fA under reverse bias up to 12V. True solar-blind operation was ensured with a sharp cut-off around 266nm. Peak responsivity of 147mA/W was measured at 256nm under 20V reverse bias. A visible rejection more than 4 orders of magnitude was achieved. The thermally-limited detectivity of the devices was calculated as 1.8 × 1013cm Hz1/2W-1. Temporal pulse response measurements of the solar-blind detectors resulted in fast pulses with high 3-dB bandwidths. The best devices had 53 ps pulse-width and 4.1 GHz bandwidth. A bandwidth-efficiency product of 2.9GHz was achieved with the AlGaN Schottky photodiodes. © 2004 Elsevier Ltd. All rights reserved.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:24:35Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2005en
dc.identifier.doi10.1016/j.sse.2004.07.009en_US
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/11693/24134
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.sse.2004.07.009en_US
dc.source.titleSolid-State Electronicsen_US
dc.subjectAlGaNen_US
dc.subjectBandwidth-efficiencyen_US
dc.subjectSchottky photodiodeen_US
dc.subjectSolar-blinden_US
dc.subjectAbsorptionen_US
dc.subjectBandwidthen_US
dc.subjectDegradationen_US
dc.subjectFabricationen_US
dc.subjectLeakage currentsen_US
dc.subjectMicrowavesen_US
dc.subjectPhotodiodesen_US
dc.subjectReactive ion etchingen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectThermoanalysisen_US
dc.subjectUltraviolet detectorsen_US
dc.subjectHarmonic beamsen_US
dc.subjectLight-sourcesen_US
dc.subjectSchottky photodiodesen_US
dc.subjectSpectral responsivityen_US
dc.subjectAluminum compoundsen_US
dc.titleHigh bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark currenten_US
dc.typeArticleen_US

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