High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current

Date
2005-01
Advisor
Instructor
Source Title
Solid-State Electronics
Print ISSN
0038-1101
Electronic ISSN
Publisher
Pergamon Press
Volume
49
Issue
1
Pages
117 - 122
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30 μm diameter devices exhibited leakage current below 3fA under reverse bias up to 12V. True solar-blind operation was ensured with a sharp cut-off around 266nm. Peak responsivity of 147mA/W was measured at 256nm under 20V reverse bias. A visible rejection more than 4 orders of magnitude was achieved. The thermally-limited detectivity of the devices was calculated as 1.8 × 1013cm Hz1/2W-1. Temporal pulse response measurements of the solar-blind detectors resulted in fast pulses with high 3-dB bandwidths. The best devices had 53 ps pulse-width and 4.1 GHz bandwidth. A bandwidth-efficiency product of 2.9GHz was achieved with the AlGaN Schottky photodiodes. © 2004 Elsevier Ltd. All rights reserved.

Course
Other identifiers
Book Title
Keywords
AlGaN, Bandwidth-efficiency, Schottky photodiode, Solar-blind, Absorption, Bandwidth, Degradation, Fabrication, Leakage currents, Microwaves, Photodiodes, Reactive ion etching, Schottky barrier diodes, Thermoanalysis, Ultraviolet detectors, Harmonic beams, Light-sources, Schottky photodiodes, Spectral responsivity, Aluminum compounds
Citation
Published Version (Please cite this version)