Indium rich InGaN solar cells grown by MOCVD

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage3658en_US
dc.citation.issueNumber8en_US
dc.citation.spage3652en_US
dc.citation.volumeNumber25en_US
dc.contributor.authorÇakmak, H.en_US
dc.contributor.authorArslan, E.en_US
dc.contributor.authorRudziński, M.en_US
dc.contributor.authorDemirel, P.en_US
dc.contributor.authorUnalan, H. E.en_US
dc.contributor.authorStrupiński, W.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorÖztürk, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:00:49Z
dc.date.available2016-02-08T11:00:49Z
dc.date.issued2014en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThis study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm2, open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm2) at room temperature for finished devices was 0.66 %.en_US
dc.identifier.doi10.1007/s10854-014-2070-4en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/26509
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-014-2070-4en_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.subjectEpilayersen_US
dc.subjectGallium alloysen_US
dc.subjectIndiumen_US
dc.subjectLight sourcesen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectOpen circuit voltageen_US
dc.subjectSapphireen_US
dc.subjectBetter performanceen_US
dc.subjectCurrent voltage measurementen_US
dc.subjectRoom temperatureen_US
dc.subjectSapphire substratesen_US
dc.subjectSolar cell devicesen_US
dc.subjectSolar cell structuresen_US
dc.subjectSolar simulatoren_US
dc.subjectX-ray reciprocal space mappingen_US
dc.subjectSolar cellsen_US
dc.titleIndium rich InGaN solar cells grown by MOCVDen_US
dc.typeArticleen_US

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