Indium rich InGaN solar cells grown by MOCVD

Date
2014
Advisor
Instructor
Source Title
Journal of Materials Science: Materials in Electronics
Print ISSN
0957-4522
Electronic ISSN
Publisher
Springer New York LLC
Volume
25
Issue
8
Pages
3652 - 3658
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm2, open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm2) at room temperature for finished devices was 0.66 %.

Course
Other identifiers
Book Title
Keywords
Epilayers, Gallium alloys, Indium, Light sources, Metallorganic chemical vapor deposition, Open circuit voltage, Sapphire, Better performance, Current voltage measurement, Room temperature, Sapphire substrates, Solar cell devices, Solar cell structures, Solar simulator, X-ray reciprocal space mapping, Solar cells
Citation
Published Version (Please cite this version)