Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment

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buir.contributor.authorKurt, Gökhan
buir.contributor.authorGülseren, Melisa Ekin
buir.contributor.authorGhobadi, Türkan Gamze Ulusoy
buir.contributor.authorUral, Sertaç
buir.contributor.authorKayal, Ömer Ahmet
buir.contributor.authorÖztürk, Mustafa
buir.contributor.authorBütün, Bayram
buir.contributor.authorKabak, Mehmet
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage27en_US
dc.citation.spage22en_US
dc.citation.volumeNumber158en_US
dc.contributor.authorKurt, Gökhanen_US
dc.contributor.authorGülseren, Melisa Ekinen_US
dc.contributor.authorGhobadi, Türkan Gamze Ulusoyen_US
dc.contributor.authorUral, Sertaçen_US
dc.contributor.authorKayal, Ömer Ahmeten_US
dc.contributor.authorÖztürk, Mustafaen_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorKabak, Mehmeten_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-12T12:27:44Z
dc.date.available2020-02-12T12:27:44Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of 10−11 A/mm was achieved from normally-off MIS-HEMT device (Vth = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al2O3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment.en_US
dc.description.provenanceSubmitted by Onur Emek (onur.emek@bilkent.edu.tr) on 2020-02-12T12:27:44Z No. of bitstreams: 1 Bilkent-research-paper.pdf: 268963 bytes, checksum: ad2e3a30c8172b573b9662390ed2d3cf (MD5)en
dc.description.provenanceMade available in DSpace on 2020-02-12T12:27:44Z (GMT). No. of bitstreams: 1 Bilkent-research-paper.pdf: 268963 bytes, checksum: ad2e3a30c8172b573b9662390ed2d3cf (MD5) Previous issue date: 2019en
dc.embargo.release2021-08-01
dc.identifier.doi10.1016/j.sse.2019.05.008en_US
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/11693/53315
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://doi.org/10.1016/j.sse.2019.05.008en_US
dc.source.titleSolid-State Electronicsen_US
dc.subjectGaNen_US
dc.subjectGate leakage currenten_US
dc.subjectHEMTen_US
dc.subjectHysteresisen_US
dc.subjectNormally-offen_US
dc.subjectPre-treatmenten_US
dc.titleNormally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatmenten_US
dc.typeArticleen_US

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