Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage909en_US
dc.citation.issueNumber9en_US
dc.citation.spage904en_US
dc.citation.volumeNumber3en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-01-31T08:55:10Z
dc.date.available2019-01-31T08:55:10Z
dc.date.issued2009en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe explored the effects of various pseudomorphic AlN layer insertions in lattice-matched In0.18Al0.82N/GaN based heterostructures on band structures and carrier densities with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. According to the calculations, important increase in carrier density is expected with an increasing number of AlN insertions in In0.18Al0.82N barrier. The effect of the position of an AlN layer in In0.18Al0.82N barrier is also investigated. An additional AlN layer insertion in the GaN layer is calculated in detail with the help of an experimental point of view, in which the possible effects on both carrier density and mobility are discussed.en_US
dc.identifier.issn1842-6573
dc.identifier.urihttp://hdl.handle.net/11693/48581
dc.language.isoEnglishen_US
dc.publisherInstitutul National de Cercetare-Dezvoltare pentru Optoelectronicaen_US
dc.source.titleOptoelectronics and Advanced Materials Rapid Communicationsen_US
dc.subjectAlInNen_US
dc.subjectInAlNen_US
dc.subjectHEMTen_US
dc.subjectSchrödingeren_US
dc.subjectPoissonen_US
dc.subject2DEGen_US
dc.subjectHeterostructureen_US
dc.titleEffect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructuresen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Effect_of_various_pseudomorphic_AIN_layer_insertions_on_the_electron_densities_of_two-dimensional_electron_gas_in_lattice-matched.pdf
Size:
256.43 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)