Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
buir.contributor.author | Tanatar, Bilal | |
buir.contributor.orcid | Tanatar, Bilal|0000-0002-5246-0119 | |
dc.citation.epage | 5127 | en_US |
dc.citation.issueNumber | 27 | en_US |
dc.citation.spage | 5113 | en_US |
dc.citation.volumeNumber | 6 | en_US |
dc.contributor.author | Tanatar, Bilal | en_US |
dc.contributor.author | Constantinou, N. C. | en_US |
dc.date.accessioned | 2016-02-08T10:52:54Z | |
dc.date.available | 2016-02-08T10:52:54Z | |
dc.date.issued | 1994 | en_US |
dc.department | Department of Physics | en_US |
dc.description.abstract | We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:52:54Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1994 | en |
dc.identifier.doi | 10.1088/0953-8984/6/27/020 | en_US |
dc.identifier.issn | 0953-8984 | |
dc.identifier.uri | http://hdl.handle.net/11693/25954 | |
dc.language.iso | English | en_US |
dc.publisher | Institute of Physics Publishing Ltd. | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1088/0953-8984/6/27/020 | en_US |
dc.source.title | Journal of Physics Condensed Matter | en_US |
dc.subject | Alloy disorder scattering | en_US |
dc.subject | Axial magnetic field | en_US |
dc.subject | Electron impurity interaction | en_US |
dc.subject | Homogeneous background scattering | en_US |
dc.subject | Interface roughness scattering | en_US |
dc.subject | Remote impurity scattering | en_US |
dc.subject | Anisotropy | en_US |
dc.subject | Charge carriers | en_US |
dc.subject | Crystal impurities | en_US |
dc.subject | Electron energy levels | en_US |
dc.subject | Electron scattering | en_US |
dc.subject | Low temperature effects | en_US |
dc.subject | Magnetic field effects | en_US |
dc.subject | Mathematical models | en_US |
dc.subject | Semiconducting gallium arsenide | en_US |
dc.subject | Electron transport properties | en_US |
dc.title | Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems | en_US |
dc.type | Article | en_US |
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