Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage5127en_US
dc.citation.issueNumber27en_US
dc.citation.spage5113en_US
dc.citation.volumeNumber6en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorConstantinou, N. C.en_US
dc.date.accessioned2016-02-08T10:52:54Z
dc.date.available2016-02-08T10:52:54Z
dc.date.issued1994en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:52:54Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1994en
dc.identifier.doi10.1088/0953-8984/6/27/020en_US
dc.identifier.issn0953-8984
dc.identifier.urihttp://hdl.handle.net/11693/25954
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-8984/6/27/020en_US
dc.source.titleJournal of Physics Condensed Matteren_US
dc.subjectAlloy disorder scatteringen_US
dc.subjectAxial magnetic fielden_US
dc.subjectElectron impurity interactionen_US
dc.subjectHomogeneous background scatteringen_US
dc.subjectInterface roughness scatteringen_US
dc.subjectRemote impurity scatteringen_US
dc.subjectAnisotropyen_US
dc.subjectCharge carriersen_US
dc.subjectCrystal impuritiesen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectron scatteringen_US
dc.subjectLow temperature effectsen_US
dc.subjectMagnetic field effectsen_US
dc.subjectMathematical modelsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectElectron transport propertiesen_US
dc.titleMagnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systemsen_US
dc.typeArticleen_US

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