Facet cooling in high-power InGaAs/AlGaAs lasers

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buir.contributor.authorArslan, Seval
buir.contributor.authorGündoğdu, Sinan
buir.contributor.authorDemir, Abdullah
dc.citation.epage97en_US
dc.citation.issueNumber1en_US
dc.citation.spage94en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorArslan, Sevalen_US
dc.contributor.authorGündoğdu, Sinanen_US
dc.contributor.authorDemir, Abdullahen_US
dc.contributor.authorAydınlı, A.en_US
dc.date.accessioned2020-02-06T06:33:35Z
dc.date.available2020-02-06T06:33:35Z
dc.date.issued2019
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractSeveral factors limit the reliable output power of a semiconductor laser under CW operation, such as carrier leakage, thermal effects, and catastrophic optical mirror damage (COMD). Ever higher operating powers may be possible if the COMD can be avoided. Despite exotic facet engineering and progress in non-absorbing mirrors, the temperature rise at the facets puts a strain on the long-term reliability of these diodes. Although thermoelectrically isolating the heat source away from the facets with non-injected windows helps lower the facet temperature, data suggests the farther the heat source is from the facets, the lower the temperature. In this letter, we show that longer non-injected sections lead to cooler windows and biasing this section to transparency eliminates the optical loss. We report on the facet temperature reduction that reaches below the bulk temperature in high power InGaAs/AlGaAs lasers under QCW operation with electrically isolated and biased windows. Acting as transparent optical interconnects, biased sections connect the active cavity to the facets. This approach can be applied to a wide range of semiconductor lasers to improve device reliability as well as enabling the monolithic integration of lasers in photonic integrated circuits.en_US
dc.identifier.doi10.1109/LPT.2018.2884465en_US
dc.identifier.eissn1941-0174
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/11693/53108
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/LPT.2018.2884465en_US
dc.source.titleIEEE Photonics Technology Lettersen_US
dc.subjectCatastrophic optical damageen_US
dc.subjectDiode lasersen_US
dc.subjectHigh power lasersen_US
dc.subjectReliabilityen_US
dc.subjectSemiconductor lasersen_US
dc.titleFacet cooling in high-power InGaAs/AlGaAs lasersen_US
dc.typeArticleen_US

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Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)