Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications

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buir.contributor.authorZafar, Salahuddin
buir.contributor.authorÇankaya Akoğlu, Büşra
buir.contributor.authorAras, Erdem
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorNawaz, Muhammad İmran
buir.contributor.authorKashif, Ahsanullah
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidZafar, Salahuddin|0000-0002-5212-9602
buir.contributor.orcidÇankaya Akoğlu, Büşra|0000-0001-5680-1649
buir.contributor.orcidAras, Erdem|0000-0001-8291-8509
buir.contributor.orcidYılmaz, Doğan|0000-0001-6102-4477
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2319en_US
dc.citation.issueNumber7en_US
dc.citation.spage2305en_US
dc.citation.volumeNumber50en_US
dc.contributor.authorZafar, Salahuddin
dc.contributor.authorÇankaya Akoğlu, Büşra
dc.contributor.authorAras, Erdem
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorNawaz, Muhammad İmran
dc.contributor.authorKashif, Ahsanullah
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T14:09:47Z
dc.date.available2023-02-28T14:09:47Z
dc.date.issued2022-07
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN on a SiC HEMT process. Owing to the optimum choice of HEMT topologies and simultaneous matching technique, LNA achieves a noise figure better than 2 dB, output power at 1 dB gain compression higher than 19 dB, input and output reflection coefficients better than −9 and −11 dB, respectively. The small-signal gain of LNA is more than 19 dB for the whole band, and NF has a minimum of 1.74 dB at 10.2 GHz. LNA obtains an OIP3 up to 34.2 dBm and survives input power as high as 42 dBm. Survivability is investigated in terms of gain compression and forward gate current. Reverse recovery time (RRT), a crucial parameter for radar front-ends, is explored with respect to the RC time constant and trap phenomenon. The analysis shows that the significant contribution in RRT is due to traps while the RC time constant is in the nanoseconds range. Moreover, this study also addresses the requirement and choice of a DC gate feed resistor for the subsequent stages in a multi-stage design. The size of the designed LNA chip is 3 mm (Formula presented.) 1.2 mm only.en_US
dc.description.provenanceSubmitted by Ezgi Uğurlu (ezgi.ugurlu@bilkent.edu.tr) on 2023-02-28T14:09:46Z No. of bitstreams: 1 Design_and_robustness_improvement_of_high-performance_LNA_using_0.15_μm_GaN_technology_for_X-band_applications.pdf: 11504455 bytes, checksum: 3d34b113fe76c5e0600c32754c6fcf04 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-28T14:09:47Z (GMT). No. of bitstreams: 1 Design_and_robustness_improvement_of_high-performance_LNA_using_0.15_μm_GaN_technology_for_X-band_applications.pdf: 11504455 bytes, checksum: 3d34b113fe76c5e0600c32754c6fcf04 (MD5) Previous issue date: 2022-07en
dc.identifier.doi10.1002/cta.3286en_US
dc.identifier.issn0098-9886
dc.identifier.urihttp://hdl.handle.net/11693/111962
dc.language.isoEnglishen_US
dc.publisherJohn Wiley & Sons Ltd.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1002/cta.3286en_US
dc.source.titleInternational Journal of Circuit Theory and Applicationsen_US
dc.subjectGain compressionen_US
dc.subjectGaN-on-SiCen_US
dc.subjectGate turn-onen_US
dc.subjectLow-noise amplifieren_US
dc.subjectReverse recovery timeen_US
dc.subjectSurvivabilityen_US
dc.titleDesign and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applicationsen_US
dc.typeArticleen_US

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