Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorToprak, Ahmet
buir.contributor.authorOsmanoǧlu, Sinan
buir.contributor.authorÖztürk, Mustafa
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorBütün, Bayram
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage125017-7en_US
dc.citation.issueNumber12en_US
dc.citation.spage125017-1en_US
dc.citation.volumeNumber33en_US
dc.contributor.authorToprak, Ahmeten_US
dc.contributor.authorOsmanoǧlu, Sinanen_US
dc.contributor.authorÖztürk, Mustafaen_US
dc.contributor.authorYılmaz, Doğanen_US
dc.contributor.authorCengiz, Ö.en_US
dc.contributor.authorŞen, Ö.en_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorÖzcan, Ş.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2019-02-21T16:03:39Z
dc.date.available2019-02-21T16:03:39Z
dc.date.issued2018en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThis work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, 125 μm gate width and 0.3 μm gate length in various gate structures were fabricated to achieve the desired frequency response with a robust, high yield, and repeatable process. The maximum drain current (IDS,max), maximum DC transconductance (gm), pinch-off voltage (Vth), current-gain cutoff frequency (fT), maximum oscillation frequency (fmax), and RF characteristics of the devices in terms of the small-signal gain and RF output power (Pout) at 8 GHz were investigated. The results showed that the output power is increased by 1 dB when the gate structure is changed from field plate to gamma gate. The Vth, gm, fT and fmax values are maximized when the thickness of the passivation layer between the gate foot and the gate head is minimized. It is shown that the IDS,max is decreased and Pout is increased when the gate recess etching process is performed.
dc.identifier.doi10.1088/1361-6641/aaebab
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/50124
dc.language.isoEnglish
dc.publisherInstitute of Physics Publishing
dc.relation.isversionofhttps://doi.org/10.1088/1361-6641/aaebab
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectAlGaNen_US
dc.subjectField plateen_US
dc.subjectGamma gateen_US
dc.subjectGaNen_US
dc.subjectHigh-electron mobility transistor (HEMT)en_US
dc.subjectRecessed gateen_US
dc.titleEffect of gate structures on the DC and RF performance of AlGaN/GaN HEMTsen_US
dc.typeArticleen_US

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Nanotechnology Research Center (NANOTAM)
Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)