The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT

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buir.contributor.authorAkoğlu, Büşra Çankaya
buir.contributor.authorYılmaz, Doğan
buir.contributor.authorSalkım, Gurur
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidAkoğlu, Büşra Çankaya|0000-0001-5680-1649
buir.contributor.orcidDoğan, Yılmaz|0000-0001-6102-4477
buir.contributor.orcidSalkım, Gurur|0000-0003-1044-2745
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage8en_US
dc.citation.issueNumber4en_US
dc.citation.spage1en_US
dc.citation.volumeNumber4en_US
dc.contributor.authorAkoğlu, Büşra Çankaya
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorSalkım, Gurur
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-27T07:11:32Z
dc.date.available2023-02-27T07:11:32Z
dc.date.issued2022-12-15
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were fully fabricated using NANOTAM's 0.5 μm gate length technology. PMA was performed at 450 °C for 10 min in nitrogen ambient for one of the wafers. The main focus was the effect of PMA on the electrical performance of HEMTs, including gate resistivity, transconductance, small-signal gain, output power (Pout), and threshold voltage (Vth) shift. It is achieved that HEMT with PMA has a gain of 18.5 dB, while HEMT without PMA shows a small-signal gain of 21.8 dB, as the PMA process increases the gate resistance (Rg) and decreases the transconductance (gm). The large-signal performance of the sample with PMA is better than the one without PMA, having an increase of 1.4 W/mm in Pout from 20.9 W to 24.4 W. The transistor with PMA also demonstrates a reliable gate performance and stable Vth, and the wafer exhibits better uniformity.en_US
dc.description.provenanceSubmitted by Ayça Nur Sezen (ayca.sezen@bilkent.edu.tr) on 2023-02-27T07:11:31Z No. of bitstreams: 1 The_effect_of_post-metal_annealing_on_DC_and_RF_performance_of_AlGaNGaN_HEMT.pdf: 1060846 bytes, checksum: 8de197e50a1ee4196bbff80b9d3a15b5 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-27T07:11:32Z (GMT). No. of bitstreams: 1 The_effect_of_post-metal_annealing_on_DC_and_RF_performance_of_AlGaNGaN_HEMT.pdf: 1060846 bytes, checksum: 8de197e50a1ee4196bbff80b9d3a15b5 (MD5) Previous issue date: 2022-12-15en
dc.identifier.doi10.1088/2631-8695/aca95fen_US
dc.identifier.eissn2631-8695
dc.identifier.urihttp://hdl.handle.net/11693/111790
dc.language.isoEnglishen_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.relation.isversionofhttps://doi.org/10.1088/2631-8695/aca95fen_US
dc.source.titleEngineering Research Expressen_US
dc.subjectAlGaN/GaN HEMTen_US
dc.subjectPost-metal annealingen_US
dc.subjectGate Schottky qualityen_US
dc.subjectVth shiften_US
dc.subjectDC and RF performanceen_US
dc.titleThe effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMTen_US
dc.typeArticleen_US

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