Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires

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buir.contributor.authorTanatar, Bilal
buir.contributor.orcidTanatar, Bilal|0000-0002-5246-0119
dc.citation.epage512en_US
dc.citation.issueNumber7en_US
dc.citation.spage509en_US
dc.citation.volumeNumber99en_US
dc.contributor.authorBennett, C. R.en_US
dc.contributor.authorTanatar, Bilalen_US
dc.contributor.authorConstantinou, N. C.en_US
dc.date.accessioned2016-02-08T10:50:33Z
dc.date.available2016-02-08T10:50:33Z
dc.date.issued1996en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.en_US
dc.identifier.doi10.1016/0038-1098(96)00266-9en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25797
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0038-1098(96)00266-9en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectApproximation theoryen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectron scatteringen_US
dc.subjectElectron transport propertiesen_US
dc.subjectElectronic density of statesen_US
dc.subjectEnergy conservationen_US
dc.subjectHot carriersen_US
dc.subjectPhononsen_US
dc.subjectRandom processesen_US
dc.subjectRelaxation processesen_US
dc.subjectSemiconductor device structuresen_US
dc.subjectDynamical screening effectsen_US
dc.subjectElectron hole plasmaen_US
dc.subjectEnergy momentum conservationen_US
dc.subjectHot electron momentum relaxationen_US
dc.subjectHot electron scatteringen_US
dc.subjectNeutral plasma componentsen_US
dc.subjectPhotoexcited quasi one dimensional structureen_US
dc.subjectPlasmon phonon couplingen_US
dc.subjectPower lossen_US
dc.subjectRandom phase approximationen_US
dc.subjectSemiconductor quantum wiresen_US
dc.titleDynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wiresen_US
dc.typeArticleen_US
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