Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models

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buir.contributor.authorDâna, Aykutlu
buir.contributor.authorAydınlı, Atilla
dc.citation.epage1336en_US
dc.citation.issueNumber5en_US
dc.citation.spage1332en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorBasa, P.en_US
dc.contributor.authorPetrik, P.en_US
dc.contributor.authorFried, M.en_US
dc.contributor.authorDâna, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorFoss, S.en_US
dc.contributor.authorFinstad, T. G.en_US
dc.date.accessioned2016-02-08T11:36:30Z
dc.date.available2016-02-08T11:36:30Z
dc.date.issued2008-05en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physics
dc.departmentAdvanced Research Laboratories (ARL)
dc.departmentDepartment of Electrical and Electronics Engineering
dc.description.abstractGe-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:36:30Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2008en
dc.identifier.doi10.1002/pssc.200777773en_US
dc.identifier.issn1862-6351
dc.identifier.urihttp://hdl.handle.net/11693/26811
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttps://doi.org/10.1002/pssc.200777773en_US
dc.source.titlePhysica Status Solidi (C) Current Topics in Solid State Physicsen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectDielectric functionsen_US
dc.subjectEffective medium theoriesen_US
dc.subjectGe nanocrystalsen_US
dc.subjectHigh-temperature annealingen_US
dc.subjectLayer thicknessen_US
dc.subjectNanocrystal sizesen_US
dc.subjectOscillator parametersen_US
dc.subjectParametric modelsen_US
dc.subjectPlasma enhanced chemical vapour depositionen_US
dc.subjectSemiconductor modelen_US
dc.subjectSi substratesen_US
dc.subjectGermaniumen_US
dc.subjectPlasma depositionen_US
dc.subjectSilicon compoundsen_US
dc.subjectSpectroscopic ellipsometryen_US
dc.subjectNanocrystalsen_US
dc.titleSpectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric modelsen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Advanced Research Laboratories (ARL)
Department of Electrical and Electronics Engineering
Department of Physics