60W stacked-HEMT based asymmetric X-band GaN SPDT switch for single chip T/R modules

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buir.contributor.authorErtürk, Volkan
buir.contributor.authorGürdal, Armağan
buir.contributor.authorÇankaya Akoğlu, Büşra
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidErtürk, Volkan|0000-0002-9168-4246
buir.contributor.orcidGürdal, Armağan|0000-0002-8008-7438
buir.contributor.orcidÇankaya Akoğlu, Büşra|0000-0001-5680-1649
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage268en_US
dc.citation.spage265
dc.contributor.authorErtürk, Volkan
dc.contributor.authorGürdal, Armağan
dc.contributor.authorÇankaya Akoğlu, Büşra
dc.contributor.authorÖzbay, Ekmel
dc.coverage.spatialBerlin, Germany
dc.date.accessioned2024-03-18T13:35:18Z
dc.date.available2024-03-18T13:35:18Z
dc.date.issued2023-10-25
dc.departmentNanotechnology Research Center (NANOTAM)
dc.departmentDepartment of Electrical and Electronics Engineering
dc.descriptionDate of Conference: 18-19 September 2023
dc.descriptionConference Name: 18th European Microwave Integrated Circuits Conference, EuMIC 2023
dc.description.abstractThis paper presents a high-power, asymmetric single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch using high electron mobility transistors (HEMT) with AlGaN/GaN technology for single chip X-band T/R modules. The SPDT switch is designed in series-shunt topology for high-power handling and low-loss performance. For high-power handling, shunt-stacked HEMTs on the transmit (Tx) path and series-stacked HEMTs on the receive (Rx) path are used. In its Tx mode, the switch has achieved an insertion loss better than 0.75 dB throughout the 6-13 GHz bandwidth with a return loss of 14 dB and an isolation of 28 dB. It can handle more than 60 W RF input power at 0.1 dB compression. In its Rx mode, the switch can receive signals with an insertion loss lower than 1.15 dB with 14 dB return loss and 19 dB isolation. With its low insertion and high-power handling capacity from C-band to Ku-band, this switch shows state-of-the-art performance for communication systems.
dc.description.provenanceMade available in DSpace on 2024-03-18T13:35:18Z (GMT). No. of bitstreams: 1 60W_stacked_HEMT_based_asymmetric_X_band_GaN_SPDT_switch_for_single_chip_T_R_modules.pdf: 1250625 bytes, checksum: c5839738ca1863011aedf493660fda7e (MD5) Previous issue date: 2023-10en
dc.identifier.doi10.23919/EuMIC58042.2023.10288908
dc.identifier.eisbn9782874870736
dc.identifier.isbn9798350348330
dc.identifier.urihttps://hdl.handle.net/11693/114911
dc.language.isoEnglish
dc.publisherIEEE - Institute of Electrical and Electronics Engineers
dc.relation.isversionofhttps://dx.doi.org/10.23919/EuMIC58042.2023.10288908
dc.source.title2023 18th European Microwave Integrated Circuits Conference (EuMIC 2023)
dc.subjectGaN
dc.subjectHigh electron mobility transistor (HEMT)
dc.subjectSingle-pole double-throw (SPDT)
dc.subjectMonolithic microwave integrated circuit (MMIC)
dc.subjectHigh-power switch
dc.subjectShunt-stacked
dc.title60W stacked-HEMT based asymmetric X-band GaN SPDT switch for single chip T/R modules
dc.typeConference Paper

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