High-speed solar-blind photodetectors with indium-tin-oxide Schottky contacts

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2346en_US
dc.citation.issueNumber14en_US
dc.citation.spage2344en_US
dc.citation.volumeNumber82en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:30:17Z
dc.date.available2016-02-08T10:30:17Z
dc.date.issued2003en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractAlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured. True solar-blind detection was also ensured.en_US
dc.identifier.doi10.1063/1.1566459en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24499
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1566459en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectBandwidthen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectric breakdownen_US
dc.subjectElectric contactsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSpectral responsivityen_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-speed solar-blind photodetectors with indium-tin-oxide Schottky contactsen_US
dc.typeArticleen_US

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