Lithography-Free random bismuth nanostructures for full solar spectrum harvesting and mid-infrared sensing

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buir.contributor.authorSoydan, Mahmut Can
buir.contributor.authorGhobadi, Amir
buir.contributor.authorYıldırım, Deniz Umut
buir.contributor.authorErtürk, Vakur Behçet
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage1901203-11en_US
dc.citation.issueNumber4en_US
dc.citation.spage1901203-1en_US
dc.citation.volumeNumber8en_US
dc.contributor.authorSoydan, Mahmut Canen_US
dc.contributor.authorGhobadi, Amiren_US
dc.contributor.authorYıldırım, Deniz Umuten_US
dc.contributor.authorDuman, E.en_US
dc.contributor.authorBek, A.en_US
dc.contributor.authorErtürk, Vakur Behçeten_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-10T06:38:53Z
dc.date.available2020-02-10T06:38:53Z
dc.date.issued2020
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractA lithography‐free, double‐functional single bismuth (Bi) metal nanostructure is designed, fabricated, and characterized for ultrabroadband absorption in the visible (vis) and near‐infrared (NIR) ranges, and for a narrowband response with ultrahigh refractive index sensitivity in the mid‐infrared (MIR) range. To achieve a large‐scale fabrication of the design in a lithography‐free route, the oblique‐angle deposition approach is used to obtain densely packed and randomly spaced/oriented Bi nanostructures. It is shown that this fabrication technique can provide a bottom‐up approach to controlling the length and spacing of the design. The characterization findings reveal a broadband absorbance above 0.8 in vis and NIR, and a narrowband absorbance centered around 6.54 µm. Dense architecture and extraordinary permittivity of Bi provide strong field confinement in ultrasmall gaps between nanostructures, and this can be utilized for a sensing application. An ultrahigh sensitivity of 2151 nm refractive‐index unit (RIU–1) is acquired, which is, as far as it is known, the experimentally highest sensitivity attained so far. The simple and large‐scale compatible fabrication route of the design together with the extraordinary optical response of Bi coating makes this design promising for many optoelectronic and sensing applications.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkeyen_US
dc.description.sponsorshipDPT‐HAMIT. Grant Numbers: 113E331, 114E374, 115F560en_US
dc.description.sponsorshipTurkish Academy of Sciencesen_US
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştirma Kurumu. Grant Number: 115F560en_US
dc.embargo.release2021-02-19
dc.identifier.doi10.1002/adom.201901203en_US
dc.identifier.issn2195-1071
dc.identifier.urihttp://hdl.handle.net/11693/53204
dc.language.isoEnglishen_US
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.relation.isversionofhttps://doi.org/10.1002/adom.201901203en_US
dc.source.titleAdvanced Optical Materialsen_US
dc.subjectBismuthen_US
dc.subjectBroadband absorbersen_US
dc.subjectLithography‐free fabricationen_US
dc.subjectNarrowband absorbersen_US
dc.subjectUltrahigh sensitivityen_US
dc.titleLithography-Free random bismuth nanostructures for full solar spectrum harvesting and mid-infrared sensingen_US
dc.typeArticleen_US

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Nanotechnology Research Center (NANOTAM)
Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)