Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.issueNumber3en_US
dc.citation.volumeNumber33en_US
dc.contributor.authorOliva, R.en_US
dc.contributor.authorZelewski, S. J.en_US
dc.contributor.authorJanicki, L.en_US
dc.contributor.authorGwóźdź, K. R.en_US
dc.contributor.authorSerafińczuk, J.en_US
dc.contributor.authorRudziński, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorKudrawiec, R.en_US
dc.date.accessioned2019-02-21T16:03:38Z
dc.date.available2019-02-21T16:03:38Z
dc.date.issued2018en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentInstitute of Materials Science and Nanotechnology(UNAM)
dc.departmentDepartment of Physics
dc.description.abstractPhotoacoustic (PA) measurements have been performed on a series of InxGa1-xN thin films grown with x > 50%. In order to illustrate the usefulness of this technique, these measurements have been compared with the results obtained by the following conventional techniques: photoluminescence, transmittance and contactless electroreflectance. Amongst all these techniques, only PA spectroscopy exhibited signal without the undesired Fabry-Perot interferences arising from the thin film and buffer layer. By accurately assessing the strain state and composition of our samples, we were able to study the compositional dependence of the band gap of our epilayers. Our results show that a bowing parameter of 1.43 eV successfully describes the compositional dependence of the band gap of InGaN.
dc.description.sponsorshipThis work was performed within the grant of the National Science Center Poland (OPUS10 2015/19/B/ST7/02163). In addition, LJ acknowledges financial support from the National Science Center Poland (grant PRELUDIUM no. 2014/15/N/ST7/04710) and JS was supported by the statutory grant of WEMiF PWr no. 0401/0034/17.
dc.identifier.doi10.1088/1361-6641/aaa908
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/50123
dc.language.isoEnglish
dc.publisherInstitute of Physics Publishing
dc.relation.isversionofhttps://doi.org/10.1088/1361-6641/aaa908
dc.relation.projectOPUS10 2015/19/B/ST7/02163 - 0401/0034/17 - 2014/15/N/ST7/04710
dc.source.titleSemiconductor Science and Technologyen_US
dc.subjectbowing parameteren_US
dc.subjectContactless electroreflectanceen_US
dc.subjectInGaNen_US
dc.subjectPhotoacoustic spectroscopyen_US
dc.subjectPhotothermal spectroscopyen_US
dc.titleDetermination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopyen_US
dc.typeArticleen_US

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