High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage890en_US
dc.citation.spage889en_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialSan Diego, CA, USAen_US
dc.date.accessioned2016-02-08T11:57:28Zen_US
dc.date.available2016-02-08T11:57:28Zen_US
dc.date.issued2001en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 12-13 November 2001en_US
dc.descriptionConference Name: 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2001en_US
dc.description.abstractHigh-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the performance of the photodiode. Transfer matrix method was used to design the epilayer structure and to simulate the optical properties of the photodiode. Photo response measurements were carried out in 1450 nm to 1700 nm range using a tungsten-halogen projection lamp as the light source and a single pass monochromator. The deconvolved Fourier transform of the data was found to have a bandwidth of 31 GHz under conditions of 40 GHz limit.en_US
dc.identifier.doi10.1109/LEOS.2001.969102en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/27599en_US
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.2001.969102en_US
dc.source.titleProceedings of the 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2001en_US
dc.subjectBandwidthen_US
dc.subjectCavity resonatorsen_US
dc.subjectComputer simulationen_US
dc.subjectFiber lasersen_US
dc.subjectFourier transformsen_US
dc.subjectLaser pulsesen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectPhotocurrentsen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSemiconducting indium gallium arsenideen_US
dc.subjectPhoto response measurementsen_US
dc.subjectTransfer matrix methodsen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed InGaAs based resonant cavity enhanced p-i-n photodiodesen_US
dc.typeConference Paperen_US

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